TLP748JF(D4,F) Toshiba

TLP748JF TOSHIBA Photocoupler IRED & Photo-Thyristor TLP748JF Office Machine Unit: mm Household Use Equipment Solid State Relay Switching Power Supply The TOSHIBA TLP748JF consists of a photo thyristor optically coupled to an infrared emitting diode in a six lead plastic DIP package. Peak OFFstate voltage: 600 V (min) Trigger LED current: 10 mA (max) ONstate current: 150 mA (max) Isolation voltage: 4000 Vrms (min) UL-recognized: UL 1577, File No.E67349 JEDEC cUL-recognized: CSA Component Acceptance Service No.5A JEITA File No.E67349 TOSHIBA 11 7A802 VDE-approved: EN 60747-5-5 (Note 1) Weight: 0.42 g (typ.) Pin Configuration (top view) Note 1 : When a VDE approved type is needed, please designate the Option(D4). 10.16 mm pitch TLPxxxxF type Creepage distance: 8.0 mm (min) 1 6 Clearance: 8.0 mm (min) Insulation thickness: 0.4 mm (min) 2 5 3 4 1 : ANODE 2 : CATHODE 3 : N.C. 4 : CATHODE 5 : ANODE 6 : GATE Start of commercial production 2008-12 2019 1 2019-06-10 Toshiba Electronic Devices & Storage Corporation TLP748JF Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 53 C) I / C 0.7 mA / C F Peak forward current (100 s pulse, 100 pps) I 1 A FP Reverse voltage V 5 V R P 100 mW Diode power dissipation D Diode power dissipation derating (Ta 53C) P /C -1.4 mW/C D Peak forward voltage (R = 27 k) V 600 V GK DRM Peak reverse voltage (R = 27 k) V 600 V GK RRM ONstate current I 150 mA T(RMS) ONstate current derating (Ta 25C) I / C 2.0 mA / C T Peak ONstate current (100 s pulse, 120 pps) I 3 A TP Peak one cycle surge current I 2 A TSM Peak reverse gate voltage V 5 V GM Output power dissipation P 150 mW O Output power dissipation derating (Ta 25C) P / C 1.5 mW / C O Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 100 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 4000 V S rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device Considered a two terminal device: pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage V 240 V AC ac Forward current I 15 25 mA F Operating temperature T 25 85 C opr Gate to cathode resistance R 10 27 k GK Gate to cathode capacity C 0.01 0.1 F GK Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-10 Toshiba Electronic Devices & Storage Corporation Detector LED