33 3 SFH640 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, 300 V BV CEO FEATURES Phototransistor optocoupler in a 6 pin DIP package with base connection 1 6 A B Very high collector emitter breakdown voltage, BV = 300 V CEO C 5 C 2 Isolation rated voltage: 5000 V RMS Low coupling capacitance NC 3 4 E High common m ode transient immunity Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 23109 APPLICATIONS DESIGN SUPPORT TOOLS AVAILABLE Telecom Industrial controls 3D Models Design Tools Related Documents Battery powered equipment Office machines DESCRIPTION Programmable controllers The SFH640 has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor AGENCY APPROVALS detector, and is incorporated in a plastic DIP-6 package. UL It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. cUL The coupling device is designed for signal transmission DIN EN 60747-5-5 (VDE 0884-5) available with option 1 between two electrically separated circuits. ORDERING INFORMATION S F H 6 40 - X 0 T PART NUMBER CTR PACKAGE OPTION TAPE AND BIN REEL CTR (%) AGENCY CERTIFIED/PACKAGE 10 mA UL, cUL 63 to 125 100 to 200 DIP-6 SFH640-2 SFH640-3 (1) SMD-6, option 7 SFH640-2X007 SFH640-3X007T VDE, UL, cUL 63 to 125 100 to 200 (1) SMD-6, option 9 - SFH640-3X019T Notes Additional options may be possible, please contact sales office (1) Also available in tubes, do not put T on the end Rev. 1.7, 18-Jun-2019 Document Number: 83682 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD DSFH640 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Power dissipation P 100 mW diss OUTPUT Power dissipation P 150 mW diss Collector emitter voltage V 300 V CEO Collector base voltage V 300 V CBO Emitter base voltage V 7V EBO Collector current I 50 mA C Power dissipation P 150 mW diss COUPLER Storage temperature range T -55 to +125 C stg Operating temperature range T -55 to +100 C amb Soldering temperature t = 10 s T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability Axis Title Axis Title 200 10000 70 10000 60 Phototransistor 150 50 1000 1000 40 100 30 IR Diode 100 100 20 50 10 0 10 0 10 0 20406080 100 120 0 20406080 100 120 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 10 mA V -1.2 1.5 V F F Reverse voltage I = 10 A V 6- - V R R Reverse current V = 6 V I -0.01 10 A R R Capacitance V = 0 V, f = 1 kHz C -30- pF F I OUTPUT Collector emitter breakdown voltage I = 1 mA, R = 1 M BV 300 - - V CE BE CEO Voltage emitter base I = 10 A BV 7- - V EB BEO Rev. 1.7, 18-Jun-2019 Document Number: 83682 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) diss 1st line 2nd line 2nd line I - Forward Current (mA) F 1st line 2nd line