Si1308EDL www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET c V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g tested 100 % R g 0.132 at V = 10 V 1.5 GS 30 0.144 at V = 4.5 V 1.4 1.4 nC Typical ESD performance 1800 V GS 0.185 at V = 2.5 V 1.3 GS Material categorization: for definitions of compliance please see SOT-323 www.vishay.com/doc 99912 SC-70 (3 leads) APPLICATIONS D D 3 Smart phones, tablet PCs - DC/DC converters - Boost converters - Load switch, OVP switch 2 G S 1 G Top View Marking Code: KG S N-Channel MOSFET Ordering Information: Si1308EDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage V 12 GS T = 25 C 1.4 C T = 70 C 1.1 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 1.5 A a, b T = 70 C 1.2 A A Pulsed Drain Current (t = 300 s) I 6 DM T = 25 C 0.4 C Continuous Source-Drain Diode Current I S T = 25 C 0.3 A T = 25 C 0.5 C T = 70 C 0.3 C Maximum Power Dissipation P W D a, b T = 25 C 0.4 A a, b T = 70 C 0.3 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX. UNIT a, d Maximum Junction-to-Ambient t 10 s R 250 300 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 225 270 thJF Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Based on T = 25 C. C d. Maximum under steady state conditions is 360 C/W. S14-1997-Rev. C, 06-Oct-14 Document Number: 63399 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1308EDL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 - - V DS GS D V Temperature Coefficient V /T -32 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --3 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.6 - 1.5 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 1 DS GS Gate-Source Leakage I GSS V = 0 V, V = 12 V - - 20 DS GS A V = 30 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I DSS V = 30 V, V = 0 V, T = 55 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 2 - - A D(on) DS GS V = 10 V, I = 1.4 A - 0.110 0.132 GS D a Drain-Source On-State Resistance R V = 4.5 V, I = 1 A - 0.120 0.144 DS(on) GS D V = 2.5 V, I = 0.5 A - 0.142 0.185 GS D a Forward Transconductance g V = 10 V, I = 1.4 A - 5 - S fs DS D b Dynamic Input Capacitance C - 105 - iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz -23 - pF oss DS GS Reverse Transfer Capacitance C -11 - rss V = 15 V, V = 10 V, I = 1.4 A - 2.7 4.1 DS GS D Total Gate Charge Q g -1.4 2.1 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 1.4 A -0.3 - gs DS GS D Gate-Drain Charge Q -0.5 - gd Gate Resistance R f = 1 MHz 1.4 7 14 g Turn-On Delay Time t -2 4 d(on) Rise Time t -9 18 r V = 15 V, R = 13.6 DD L I 1.1 A, V = 10 V, R = 1 Turn-Off Delay Time t D GEN g -8 16 d(off) Fall Time t -8 16 f ns Turn-On Delay Time t -8 16 d(on) Rise Time t -13 20 r V = 15 V, R = 13.6 DD L I 1.1 A, V = 4.5 V, R = 1 Turn-Off Delay Time t D GEN g -15 23 d(off) Fall Time t -6 12 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 0.4 S C A a Pulse Diode Forward Current I -- 6 SM Body Diode Voltage V I = 1.1 A - 0.8 1.2 V SD F Body Diode Reverse Recovery Time t - 8 16 ns rr Body Diode Reverse Recovery Charge Q -3 6 nC rr I = 1.1 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -5 - a ns Reverse Recovery Rise Time t -3 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1997-Rev. C, 06-Oct-14 Document Number: 63399 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000