Si1403BDL www.vishay.com Vishay Siliconix P-Channel 2.5 V (G-S) MOSFET FEATURES SOT-363 SC-70 Single (6 leads) TrenchFET power MOSFET S Material categorization: 4 D for definitions of compliance please see 5 D www.vishay.com/doc 99912 6 Available 3 G 2 D 1 D Top View Marking code: OD PRODUCT SUMMARY V (V) -20 DS R max. ( ) at V = -4.5 V 0.150 DS(on) GS R max. ( ) at V = -3.6 V 0.175 DS(on) GS R max. ( ) at V = -2.5 V 0.265 DS(on) GS Q typ. (nC) 2.9 g I (A) -1.5 D Configuration Single ORDERING INFORMATION Package SC-70 Lead (Pb)-free Si1403BDL-T1-E3 Lead (Pb)-free and halogen-free Si1403BDL-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL 5 s STEADY STATE UNIT Drain-source voltage V -20 -20 DS V Gate-source voltage V 12 12 GS T = 25 C -1.5 -1.4 A a Continuous drain current (T = 150 C) I J D T = 85 C -1.2 -1.0 A A Pulsed drain current I -5 -5 DM a Continuous diode current (diode conduction) I -0.8 -0.8 S T = 25 C 0.625 0.568 A a Maximum power dissipation P W D T = 85 C 0.400 0.295 A Operating junction and storage temperature range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT t 5 s 165 200 a Maximum junction-to-ambient R thJA Steady state 180 220 C/W Maximum junction-to-foot (drain) Steady state R 105 130 thJF Note a. Surface mounted on 1 x 1 FR4 board S10-0110-Rev. D, 18-Jan-10 Document Number: 73253 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si1403BDL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Gate threshold voltage V V = V , I = -250 A -0.6 - -1.3 V GS(th) DS GS D Gate leakage I V = 0 V, V = 12 V - - 100 nA GSS DS GS V = -20 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I A DSS V = -20 V, V = 0 V, T = 85 C - - -5 DS GS J a On-state drain current I V = -5 V, V = -4.5 V -2 - - A D(on) DS GS V = -4.5 V, I = -1.5 A - 0.120 0.150 GS D a Drain-source on-state resistance R V = -3.6 V, I = -1.4 A - 0.140 0.175 DS(on) GS D V = -2.5 V, I = -0.8 A - 0.220 0.265 GS D a Forward transconductance g V = -10 V, I = -1.5 A - 3.4 - S fs DS D a Diode forward voltage V I = -0.8 A, V = 0 V - -0.8 -1.1 V SD S GS b Dynamic Total gate charge Q -2.9 4.5 g Gate-source charge Q -0V = -10 V, V = -4.5 V, I = -1.5 A .65- nC gs DS GS D Gate-drain charge Q -1.0- gd Gate resistance R f = 1 MHz - 9 - g Turn-on delay time t -13 20 d(on) Rise time t -30 45 r V = -10 V, R = 10 , DD L I -1 A, V = -4.5 V, R = 6 Turn-off delay time t -2D GEN g 842 ns d(off) Fall time t -13 20 f Source-drain reverse recovery time t -12 25 rr I = -0.8 A, dI/dt = 100 A/s F Body diode reverse recovery charge Q -4 8 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 4.0 4.0 T = - 55 C C V = 5 V thru 2.5. V GS 25 C 3.2 3.2 125 C 2.4 2.4 2 V 1.6 1.6 0.8 0.8 1.5 V 1 V, 0.5 V 0.0 0.0 0.0 0.8 1.6 2.4 3.2 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics S10-0110-Rev. D, 18-Jan-10 Document Number: 73253 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D