Si1539CDL www.vishay.com Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES SOT-363 SC-70 Dual (6 leads) TrenchFET power MOSFET S 2 4 100 % R tested g G 2 5 Material categorization: D 1 6 for definitions of compliance please se e www.vishay.com/doc 99912 3 APPLICATIONS D 2 2 DC/DC converter G 1 1 S Load switch 1 Top View D S 1 2 Marking code: RG PRODUCT SUMMARY N-CHANNEL P-CHANNEL G 2 V (V) 30 -30 DS G 1 R ( ) at V = 10 V 0.388 0.890 DS(on) GS R ( ) at V = 4.5 V 0.525 1.700 DS(on) GS Q typ. (nC) 0.55 0.8 g a S D I (A) 0.7 -0.5 D 1 2 Configuration N- and p-pair N-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Package SOT-363 Lead (Pb)-free and halogen-free Si1539CDL-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL N-CHANNELP-CHANNELUNIT Drain-source voltage V 30 -30 DS V Gate-source voltage V 20 20 GS T = 25 C 0.7 -0.5 C T = 70 C 0.6 -0.4 C Continuous drain current (T = 150 C) I J D b, c b, c T = 25 C 0.7 -0.4 A b, c b, c T = 70 C 0.5 -0.4 A A T = 25 C 0.3 -0.3 C Source-drain current diode current I S b, c b, c T = 25 C 0.2 -0.2 A Pulsed drain current I 2-1 DM T = 25 C 0.34 0.34 C = 70 C 0.22 0.22 T C Maximum power dissipation P W D b, c b, c T = 25 C 0.29 0.29 A b, c b, c T = 70 C 0.18 0.18 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS N-CHANNEL P-CHANNEL PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX. b, d Maximum junction-to-ambient t 10 s R 365 438 365 438 thJA C/W Maximum junction-to-foot (drain) Steady state R 308 370 308 370 thJF Notes a. Based on T = 25 C C b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. Maximum under steady state conditions is 486 C/W (N-channel) and 486 C/W (P-channel) S11-0238-Rev. A, 14-Feb-11 Document Number: 67469 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si1539CDL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a PARAMETER SYMBOL TEST CONDITIONS MIN.TYP. MAX. UNIT Static V = 0 V, I = 250 A N-Ch 30 - - GS D Drain-source breakdown voltage V V DS V = 0 V, I = -250 A P-Ch -30 - - GS D I = 250 A N-Ch - 30 - D V temperature coefficient V /T DS DS J I = -250 A P-Ch - -18 - D mV/C I = 250 A N-Ch - -3.6 - D V temperature coefficient V /T GS(th) GS(th) J I = -250 A P-Ch - 3.3 - D V = V , I = 250 A N-Ch 1.2 - 2.5 DS GS D Gate-source threshold voltage V V GS(th) V = V , I = -250 A P-Ch -1.2 - -2.5 DS GS D N-Ch - - 100 Gate-body leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - - 100 V = 30 V, V = 0 V N-Ch - - 1 DS GS V = -30 V, V = 0 V P-Ch - - -1 DS GS Zero gate voltage drain current I A DSS V = 30 V, V = 0 V, T = 55 C N-Ch - - 10 DS GS J V = -30 V, V = 0 V, T = 55 C P-Ch - - -10 DS GS J V = 5 V, V = 10 V N-Ch 2 - - DS GS b On-state drain current I A D(on) V = -5 V, V = -10 V P-Ch -1 - - DS GS V = 10 V, I = 0.6 A N-Ch - 0.323 0.388 GS D V = -10 V, I = -0.4 A P-Ch - 0.740 0.890 GS D b Drain-source on-state resistance R DS(on) V = 4.5 V, I = 0.1A N-Ch - 0.437 0.525 GS D V = -4.5 V, I = -0.1 A P-Ch - 1.4 1.7 GS D V = 15 V, I = 0.6 A N-Ch - 1.2 - DS D b Forward transconductance g S fs V = -15 V, I = -0.4 A P-Ch - 0.6 - DS D a Dynamic N-Ch - 28 - Input capacitance C iss P-Ch - 34 - N-Channel V = 15 V, V = 0 V, f = 1 MHz DS GS N-Ch - 10 - Output capacitance C pF oss P-Ch - 12 - P-Channel V = -15 V, V = 0 V, f = 1 MHz N-Ch - 5 - DS GS Reverse transfer capacitance C rss P-Ch - 7 - V = 15 V, V = 10 V, I = 0.6 A N-Ch - 1 1.5 DS GS D V = -15 V, V = -10 V, I = -0.4 A P-Ch - 1.5 3 DS GS D Total gate charge Q g N-Ch - 0.55 1.1 P-Ch - 0.8 1.2 N-Channel nC V = 15 V, V = 4.5 V I = 0.6 A DS GS D N-Ch - 0.2 - Gate-source charge Q gs P-Ch - 0.4 - P-Channel V = -15 V, V = -4.5 V, I = -0.4 A N-Ch - 0.2 - DS GS D Gate-drain charge Q gd P-Ch - 0.35 - N-Ch 0.7 3.7 7.4 Gate resistance R f = 1 MHz g P-Ch 1.7 8.3 16.6 S11-0238-Rev. A, 14-Feb-11 Document Number: 67469 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000