Si1926DL www.vishay.com Vishay Siliconix Dual N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) R () MAX. I (A) Q (nC) TYP. DS DS(on) D g 100 % R tested g 1.4 at V = 10 V 0.37 GS 60 0.47 ESD protected: 1800 V 3 at V = 4.5 V 0.25 GS Material categorization: for definitions of compliance please see Available SOT-363 www.vishay.com/doc 99912 SC-70 Dual (6 leads) S 2 APPLICATIONS 4 G 2 5 Low power load switch D 1 6 D D 1 2 3 D 2 2 G 1 1 G G 1 2 S 1 Top View Marking Code: PD S S 1 2 Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free) N-Channel MOSFET N-Channel MOSFET Si1926DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 0.37 C T = 70 C 0.30 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 0.34 A b, c T = 70 C 0.27 A A Pulsed Drain Current I 0.65 DM T = 25 C 0.43 C Continuous Source-Drain Diode Current I S b, c T = 25 C 0.25 A T = 25 C 0.51 C T = 70 C 0.33 C Maximum Power Dissipation P W D b, c T = 25 C 0.30 A b, c T = 70 C 0.20 A Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, d Maximum Junction-to-Ambient t 5 s R 360 415 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 300 350 thJF Notes a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 400 C/W. S14-1565-Rev. F, 04-Aug-14 Document Number: 73684 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1926DL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONSMIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T - 56.7 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --3 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 10 V - - 150 nA GSS DS GS V = 60 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 60 V, V = 0 V, T = 85 C - - 10 DS GS J V 10 V, V = 4.5 V 0.50 - - DS GS a On-State Drain Current I A D(on) V 7.5 V, V = 10 V 0.65 - - DS GS V = 10 V, I = 0.34 A - - 1.4 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 0.23 A - - 3 GS D Forward Transconductance g V = 30 V, I = 0.2 A - 159 - ms fs DS D b Dynamic Input Capacitance C - 18.5 - iss Output Capacitance C -7V = 30 V, V = 0 V, f = 1 MHz.5- pF oss DS GS Reverse Transfer Capacitance C -4.2 - rss V = 30 V, V = 10 V, I = 0.34 A - 0.9 1.4 DS GS D Total Gate Charge Q g - 0.5 0.75 nC Gate-Source Charge Q V = 30 V, V = 4.5 V, I = 0.34 A -0.2 - gs DS GS D Gate-Drain Charge Q -0.15- gd Gate Resistance R f = 1 MHz - 160 240 g Turn-On Delay Time t -6.5 10 d(on) Rise Time t -12 18 r V = 30 V, R = 100 , DD L ns I 0.3 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t -1322 d(off) Fall Time t -14 21 f Drain-Source Body Diode Characteristics Continuous Sorce-Drain Diode Current I T = 25 C - - 0.43 S C A a Pulse Diode Forward Current I - - 0.65 SM Body Diode Voltage V I = 0.3 A - 0.8 1.2 V SD S Body Diode Reverse Recovery Time t - 16.5 25 ns rr Body Diode Reverse Recovery Charge Q -13 20 nC rr I = 0.6 A, dI/dt = 100 A/s F Reverse Recovery Fall Time t - 13.5 - a ns Reverse Recovery Rise Time t -3 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1565-Rev. F, 04-Aug-14 Document Number: 73684 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000