Si2301CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( ) Q (Typ.) DS DS(on) I (A) g D Definition 0.112 at V = - 4.5 V - 3.1 GS TrenchFET Power MOSFET - 20 3.3 nC Compliant to RoHS Directive 2002/95/EC 0.142 at V = - 2.5 V - 2.7 GS APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301CDS (N1)* * Marking Code Ordering Information: Si2301CDS-T1-E3 (Lead (Pb)-free) Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 8 GS T = 25 C - 3.1 C T = 70 C - 2.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 2.3 A b, c T = 70 C - 1.8 A A I Pulsed Drain Current - 10 DM T = 25 C - 1.3 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 0.72 A T = 25 C 1.6 C T = 70 C 1.0 C Maximum Power Dissipation P W D b, c T = 25 C 0.86 A b, c T = 70 C 0.55 A Operating Junction and Storage Temperature Range T , T C - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d 5 s R 120 145 Maximum Junction-to-Ambient thJA C/W R Steady State Maximum Junction-to-Foot (Drain) thJF 62 78 Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 C/W. Document Number: 68741 www.vishay.com S10-2430-Rev. C, 25-Oct-10 1Si2301CDS Vishay Siliconix MOSFET SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 18 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.4 - 1 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 6 A D(on) DS GS V = - 4.5 V, I = - 2.8 A 0.090 0.112 GS D a Drain-Source On-State Resistance R DS(on) V = - 2.5 V, I = - 2.0 A 0.110 0.142 GS D a Forward Transconductance g V = - 5 V, I = - 2.8 A 9.5 S fs DS D b Dynamic Input Capacitance C 405 iss Output Capacitance C 75V = - 10 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 55 rss V = - 10 V, V = - 4.5 V, I = - 3 A 5.5 10 DS GS D Total Gate Charge Q g 3.3 6 nC Gate-Source Charge Q V = - 10 V, V = - 2.5 V, I = - 3 A 0.7 gs DS GS D Gate-Drain Charge Q 1.3 gd Gate Resistance R f = 1 MHz 6.0 g Turn-On Delay Time t 11 20 d(on) Rise Time t 35 60 r V = - 10 V, R = 10 DD L ns I = - 1 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 30D GEN g 50 d(off) Fall Time t 10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 1.3 S C A a Pulse Diode Forward Current I - 10 SM Body Diode Voltage V I = - 0.7 A - 0.8 - 1.2 V SD S Body Diode Reverse Recovery Time t 30 50 ns rr Body Diode Reverse Recovery Charge Q 25 50 nC rr I = - 3.0 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 15 a ns Reverse Recovery Rise Time t 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68741 2 S10-2430-Rev. C, 25-Oct-10