Si2303CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.190 at V = - 10 V - 2.7 TrenchFET Power MOSFET GS - 30 2 nC 100 % R Tested 0.330 at V = - 4.5 V - 2.1 g GS 100 % UIS Tested APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303CDS (N3)* * Marking Code Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free) Si2303CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 2.7 C T = 70 C - 2.2 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 1.9 b, c T = 70 C A - 1.5 A I Pulsed Drain Current - 10 DM T = 25 C - 1.75 C I Continuous Source-Drain Diode Current S b, c T = 25 C A - 0.83 Avalanche Current I - 5 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 1.25 AS T = 25 C 2.3 C T = 70 C 1.5 C Maximum Power Dissipation P W D b, c T = 25 C A 1.0 b, c T = 70 C A 0.7 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d 5 s R 80 120 Maximum Junction-to-Ambient thJA C/W Steady State R Maximum Junction-to-Foot (Drain) 35 55 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 160 C/W. Document Number: 69991 www.vishay.com S-83053-Rev. B, 29-Dec-08 1Si2303CDS Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS DS D V Temperature Coefficient V /T - 27 DS DS J mV/C I = - 250 A D V Temperature Coefficient V /T 3.8 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 10 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 1.9 A 0.158 0.190 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 1.4 A 0.275 0.330 GS D a g V = - 5 V, I = - 1.9 A 2S Forward Transconductance fs DS D b Dynamic Input Capacitance C 155 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 35 pF oss DS GS Reverse Transfer Capacitance C 25 rss V = - 15 V, V = - 10 V, I = - 1.9 A 48 DS GS D Q Total Gate Charge g 24 nC Gate-Source Charge Q V = - 15 V, V = - 4.5 V, I = - 1.9 A 0.6 gs DS GS D Q Gate-Drain Charge 1 gd R Gate Resistance f = 1 MHz 1.7 8.5 17 g t Turn-On Delay Time 48 d(on) t Rise Time V = - 15 V, R = 10 11 18 r DD L I = - 1.5 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN G 11 18 d(off) t Fall Time 816 f ns Turn-On Delay Time t 36 44 d(on) t Rise Time V = - 15 V, R = 10 37 45 r DD L I - 1.5 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 12 18 D GEN G d(off) t Fall Time 914 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 1.75 S C A a I - 10 Pulse Diode Forward Current SM V I = - 1.5 A Body Diode Voltage - 0.8 - 1.2 V SD S Body Diode Reverse Recovery Time t 17 26 ns rr Q Body Diode Reverse Recovery Charge 914 nC rr I = - 1.5 A, di/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 12 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69991 2 S-83053-Rev. B, 29-Dec-08