X-On Electronics has gained recognition as a prominent supplier of SI2312BDS-T1-BE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2312BDS-T1-BE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2312BDS-T1-BE3 Vishay

SI2312BDS-T1-BE3 electronic component of Vishay
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Part No.SI2312BDS-T1-BE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-CHANNEL 20-V (D-S)
Datasheet: SI2312BDS-T1-BE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5951 ea
Line Total: USD 0.6 
Availability - 320104
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
320104
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5951
10 : USD 0.396
100 : USD 0.2849
500 : USD 0.2519
1000 : USD 0.2123
3000 : USD 0.1782
45000 : USD 0.1738

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
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We are delighted to provide the SI2312BDS-T1-BE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2312BDS-T1-BE3 and other electronic components in the MOSFETs category and beyond.

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Si2312BDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.031 at V = 4.5 V 5.0 GS TrenchFET Power MOSFET 20 0.037 at V = 2.5 V 4.6 7.5 GS 100 % R Tested g 0.047 at V = 1.8 V 4.1 GS Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 D S 2 Top View Si2312BDS (M2)* * Marking Code Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free) Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS T = 25 C 5.0 3.9 A a Continuous Drain Current (T = 150 C) I J D T = 70 C 4.0 3.1 A A b Pulsed Drain Current I 15 DM b Avalanche Current I 13 AS L = 0.1 mH Single Avalanche Energy E 8.45 mJ AS a Continuous Source Current (Diode Conduction) I 1.0 0.63 A S T = 25 C 1.25 0.75 A a Power Dissipation P W D T = 70 C 0.80 0.48 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 80 100 a Maximum Junction-to-Ambient R thJA Steady State 120 166 C/W Maximum Junction-to-Foot Steady State R 50 60 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 73235 www.vishay.com S10-0791-Rev. D, 05-Apr-10 1Si2312BDS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted A Limits Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 DS GS D V Gate-Threshold Voltage V V = V , I = 250 A 0.45 0.85 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 70 C 75 DS GS J a On-State Drain Current I V 10 V, V = 4.5 V 15 A D(on) DS GS V = 4.5 V, I = 5.0 A 0.025 0.031 GS D a Drain-Source On-Resistance R V = 2.5 V, I = 4.6 A 0.030 0.037 DS(on) GS D V = 1.8 V, I = 4.1 A 0.036 0.047 GS D a Forward Transconductance g V = 15 V, I = 5.0 A 30 S fs DS D Diode Forward Voltage V I = 1.0 A, V = 0 V 0.8 1.2 V SD S GS b Dynamic Total Gate Charge Q 7.5 12 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 5.0 A 1.4 nC gs DS GS D Gate-Drain Charge Q 1.2 gd Gate Resistance R f = 1.0 MHz 1.1 2.2 3.3 g Switching Turn-On Delay Time t 915 d(on) Rise Time t 30 45 r V = 10 V, R = 10 DD L I 1.0 A, V = 4.5 V, R = 6 Turn-Off Delay Time t 3555 ns D GEN g d(off) Fall Time t 10 15 f Source-Drain Reverse Recovery Time t 13 25 rr I = 1.0 A, dI/dt = 100 A/s F Body Diode Reverse Recovery Charge Q 4.5 7 nC rr Notes: a. Pulse test: Pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 15 15 V = 4.5 V thru 2 V GS 1.5 V 12 12 9 9 6 6 T = 125 C C 3 3 25 C 1 V - 55 C 0 0 01 23 4 0 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73235 2 S10-0791-Rev. D, 05-Apr-10 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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