Si3424CDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, b V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition TrenchFET Power MOSFET 0.026 at V = 10 V 8 GS 30 4.2 100 % R Tested g 0.032 at V = 4.5 V 8 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices DC/DC Converters TSOP-6 Top View D 1 6 D D (1, 2, 5, 6) Marking Code 3 mm D D 5 2 BC XX Lot Tracea bility G S 3 4 and Date Code G Part Code (3) 2.85 mm (4) S Ordering Information: Si3424CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C 8 C T = 70 C 7.7 C Continuous Drain Current (T = 150 C) I J D c, d T = 25 C A A 7.2 c, d T = 70 C A 5.7 I Pulsed Drain Current (t = 300 s) 20 DM T = 25 C 3 C I Continuous Source-Drain Diode Current A S c, d T = 25 C A 1.7 T = 25 C 3.6 C T = 70 C 2.3 C P Maximum Power Dissipation W D c, d T = 25 C A 2.0 c, d T = 70 C A 1.3 , T Operating Junction and Storage Temperature Range T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit e R t 5 s 50 62.5 C/W Maximum Junction-to-Ambient thJA R Maximum Junction-to-Foot (Drain) Steady State 28 35 thJF Notes: a. Package limited. b. Based on T = 25 C. C c. Surface mounted on 1 x 1 FR4 board. d. t = 5 s. e. Maximum under steady state conditions is 110 C/W. Document Number: 67443 www.vishay.com S11-0863-Rev. A, 02-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Y Y Si3424CDV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 28 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.7 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 12.5V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 85 C 10 DS GS J a I V = 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 7.2 A 0.021 0.026 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6.5 A 0.026 0.032 GS D g V = 15 V, I = 7.2 A Forward Transconductance 17 S fs DS D b Dynamic C Input Capacitance 405 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 92 pF oss DS GS C Reverse Transfer Capacitance 42 rss V = 15 V, V = 10 V, I = 7.2 A 8.3 12.5 DS GS D Q Total Gate Charge g 4.2 6.3 nC Q V = 24 V, V = 4.5 V, I = 7.2 A Gate-Source Charge 1.2 gs DS GS D Q Gate-Drain Charge 1.6 gd R Gate Resistance f = 1 MHz 0.6 3 6 g t Turn-On Delay Time 36 d(on) t V = 15 V, R = 2.6 Rise Time 12 20 r DD L t I 5.7 A, V = 10 V, R = 1 Turn-Off DelayTime 16 24 d(off) D GEN g t Fall Time 816 f ns t Turn-On Delay Time 10 20 d(on) t V = 15 V, R = 2.6 Rise Time 22 33 r DD L t I 5.7 A, V = 4.5 V, R = 1 Turn-Off DelayTime 15 23 d(off) D GEN g t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continous Source-Drain Diode Current 3 S C A a I 20 Pulse Diode Forward Current SM V I = 5.7 A Body Diode Voltage 0.8 1.2 V SD S t Body Diode Reverse Recovery Time 13 20 nC rr Q Body Diode Reverse Recovery Charge 510 rr I = 5.7 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 8 ns a t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67443 2 S11-0863-Rev. A, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000