Si3443CDV Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a Definition V (V) R ( ) Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.060 at V = - 4.5 V - 4.7 GS PWM Optimized 0.084 at V = - 2.7 V 100 % R Tested - 20 - 3.9 7.53 nC GS g Compliant to RoHS Directive 2002/95/EC 0.100 at V = - 2.5 V - 3.4 GS APPLICATIONS HDD Asynchronous Rectification Load Switch for Portable Devices TSOP-6 (4) S Top View 1 6 3 mm 5 2 (3) G Marking Code AL XXX 3 4 Lot Traceability and Date Code Part Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3443CDV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si3443CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Unit Parameter Symbol Limit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 12 GS T = 25 C - 5.97 C T = 70 C - 4.6 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 4.7 b, c T = 70 C A A - 3.4 I Pulsed Drain Current - 20 DM T = 25 C - 2.67 C Continuous Source-Drain Diode Current I b, c S T = 25 C - 1.71 A T = 25 C 3.2 C T = 70 C 2.05 C P Maximum Power Dissipation W D b, c T = 25 C 2 A b, c T = 70 C A 1.28 T , T Operating Junction and Storage Temperature Range J stg - 55 to 150 C THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 51 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 32 39 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 C/W. Document Number: 74495 www.vishay.com S12-0335-Rev. C, 13-Feb-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si3443CDV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 18.8 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.25 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.6 - 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V - 4.5 V, I = - 4.7 A 0.0500 0.0600 GS D a R V - 2.7 V, I = - 3.9 A 0.0692 0.0840 Drain-Source On-State Resistance DS(on) GS D V - 2.5 V, I = - 3.4 A 0.0830 0.1000 GS D a g V = - 10 V, I = - 4.7 A 15 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 610 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 132 pF oss DS GS C Reverse Transfer Capacitance 105 rss V = - 10 V, V = - 5 V, I = - 4.7 A 8.26 12.4 DS GS D Q Total Gate Charge g 7.53 11.3 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 4.7 A 1.53 gs DS GS D Gate-Drain Charge Q 2.37 gd R Gate Resistance f = 1 MHz 1.7 8.5 12.75 g Turn-On Delay Time t 27 41 d(on) t Rise Time V = - 10 V, R = 2.12 59 88.5 r DD L ns I - 4.7 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 30 45 D GEN g d(off) t Fall Time 11 16.5 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 2.67 S C A a I - 20 Pulse Diode Forward Current SM V I = - 1.7 A Body Diode Voltage - 0.8 - 1.2 V SD S Body Diode Reverse Recovery Time t 20 30 ns rr Q Body Diode Reverse Recovery Charge 913.5 nC rr I = - 1.7 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 15 a ns t Reverse Recovery Rise Time 5.1 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74495 2 S12-0335-Rev. C, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000