2.05 mm SiA4371EDJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK SC-70-6L Single D TrenchFET power MOSFET D 6 100 % R tested S 5 g 4 Thermally enhanced PowerPAK SC-70 package - Small footprint area S - Low on-resistance 1 7 2 D Typical ESD protection: 3000 V (HBM) 3 D 1 G Material categorization: for definitions of compliance Top View Bottom View please see www.vishay.com/doc 99912 Marking code: KD APPLICATIONS S PRODUCT SUMMARY Power management for portable and V (V) -30 DS consumer R max. () at V = -10 V 0.045 DS(on) GS Load switch R max. () at V = -4.5 V 0.053 DS(on) GS Charger switches G R max. () at V = -2.5 V 0.081 DS(on) GS Battery switches Q typ. (nC) 10.6 g a, e I (A) -9 D D Configuration Single P-Channel MOSFET ORDERING INFORMATION Package PowerPAK SC-70 Lead (Pb)-free and halogen-free SiA4371EDJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -30 DS V Gate-source voltage V 12 GS e T = 25 C -9 C e T = 70 C -9 C Continuous drain current (T = 150 C) I J D b, c T =25 C -6.4 A b, c T = 70 C -5.1 A A Pulsed drain current (t = 300 s) I -20 DM e T = 25 C -9 C Continuous source-drain diode current I S b, c T = 25 C -2.4 A T = 25 C 15.6 C T = 70 C 10 C Maximum power dissipation P W D b, c T = 25 C 2.9 A b, c T = 70 C 1.9 A Operating junction and storage temperature range T , T -55 to +150 J stg C c, d Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, d Maximum junction-to-ambient t 5 s R 32 43 thJA C/W Maximum junction-to-case (drain) Steady state R 68 thJC Notes a. T = 25 C C b. Surface mounted on 1 x 1 FR4 board c. t = 5 s d. Maximum under steady state conditions is 80 C/W e. Package limited S21-1125-Rev. A, 22-Nov-2021 Document Number: 63160 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2.05 mmSiA4371EDJ www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -30 - - V DS GS D V temperature coefficient V /T --24 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -2.2 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -0.6 - -1.5 V GS(th) DS GS D V = 0 V, V = 12 V - - 10 DS GS Gate-source leakage I GSS V = 0 V, V = 4.5 V - - 1 DS GS A V = -30 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I DSS V = -30 V, V = 0 V, T = 55 C - - -10 DS GS J V = -10 V, I = -3.7 A - 0.034 0.045 GS D a Drain-source on-state resistance R V = -4.5 V, I = -2 A - 0.041 0.053 DS(on) GS D V = -2.5 V, I = -2 A - 0.068 0.081 DS D b Dynamic V = -15 V, V = -10 V, I = -3.7 A - 22.8 35 DS GS D Total gate charge Q g - 10.6 16 nC Gate-source charge Q V = -15 V, V = -4.5 V, I = -3.7 A -1.7 - gs DS GS D Gate-drain charge Q -2.6 - gd Gate resistance R f = 1 MHz 2.2 11 22 g Turn-on delay time t -28 42 d(on) Rise time t -65 98 r V = -15 V, R = 5.2 , I -2.9 A, DD L D V = -4.5 V, R = 1 Turn-off delay time t GEN g -47 71 d(off) Fall time t -62 93 f ns Turn-on delay time t -7 14 d(on) Rise time t -8 16 r V = -15 V, R = 5.2 , I -2.9 A, DD L D V = -10 V, R = 1 Turn-off delay time t GEN g -52 78 d(off) Fall time t -52 78 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - -1.4 S C A Pulse diode forward current I -- -20 SM Body diode voltage V I = -2.9 A, V = 0 V - -0.8 -1.2 V SD S GS Body diode reverse recovery time t -13 20 ns rr Body diode reverse recovery charge Q - 6 12 nC rr I = -2.9 A, di/dt = 100 A/s, F T = 25 C Reverse recovery fall time t J -9 - a ns Reverse recovery rise time t -4 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1125-Rev. A, 22-Nov-2021 Document Number: 63160 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000