P VIN GND GL V C GND IN S V CC SiC651, SiC651A www.vishay.com Vishay Siliconix 50 A VRPower Integrated Power Stage DESCRIPTION FEATURES Highly efficient The SiC651 and SiC651A are high frequency integrated power stage optimized for synchronous buck applications - Thermally enhanced PowerPAK MLP55-31L to offer high current, high efficiency, and high power density package performance with very low shutdown current. Packaged in - Vishays latest TrenchFET technology and low Vishays proprietary 5 mm x 5 mm MLP package, SiC651 side MOSFET with integrated Schottky diode and SiC651A enable voltage regulator designs to deliver - Integrated, low impedance, bootstrap switch up to 50 A continuous current per phase. - Power MOSFETs optimized for 19 V input stage - Supports PS4 mode light load requirement with low The internal power MOSFETs utilize Vishays latest shutdown supply current (5 V, 3 A) TrenchFET technology that delivers industry benchmark - Zero current detection for improved light load efficiency performance to significantly reduce switching and Highly versatile conduction losses. - 5 V and 3.3 V PWM logic with tri-state and hold-off timer - 5 V DSBL , ZCD EN logic with PS4 state support The SiC651 and SiC651A incorporates an advanced - High frequency operation up to 2 MHz MOSFET gate driver IC that features high current driving Robust and reliable capability, adaptive dead-time control, an integrated - Delivers in excess of 50 A continuous current, bootstrap switch, and user selectable zero current detection 70 A, peak (10 ms) and 100 A, peak (10 s) to improve light load efficiency. The driver is also compatible - Over current protection with a wide range of PWM controllers, supports tri-state - Over temperature flag PWM, and 5 V / 3.3 V PWM logic. - Over temperature protection - Under-voltage lockout protection The device also supports PS4 mode to reduce power - High side MOSFET short detection consumption when the system is in standby state. Effective monitoring and reporting - Accurate temperature reporting The SiC651 and SiC651A offer operating temperature - Warnings and faults reporting flag monitoring, protection features, and warning flags that Material categorization: for definitions of compliance improve system monitoring and reliability. please see www.vishay.com/doc 99912 APPLICATIONS Multi-phase VRDs for computing, graphics card and memory Intel core processor power delivery -V , V , V CORE GRAPHICS SYSTEM AGENT -V CCGI Up to 24 V rail input DC/DC VR modules TYPICAL APPLICATION DIAGRAM 5V V IN BOOT PHASE ZCD EN V SWH V OUT DSBL Gate PWM driver controller PWM T /FAULT MON Fig. 1 - Typical Application Diagram S19-0862-Rev. B, 21-Oct-2019 Document Number: 76858 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiC651, SiC651A www.vishay.com Vishay Siliconix PINOUT CONFIGURATION 33 31 30 29 28 27 26 25 24 GL 24 25 26 27 28 29 30 31 PWM 1 23 V V 23 1 PWM SWH SWH GL 32 ZCD EN ZCD EN 2 22 V V 22 2 SWH SWH C GND N.C. 3 3 N.C. 21 V V 21 SWH SWH C V 20 C 4 20 V 4 GND SWH SWH GND 35 19 V V 19 BOOT 5 5 BOOT SWH SWH P GND V 18 V 6 18 V 6 V SWH 34 IN S SWH IN S V 17 V V 17 IN PHASE 7 SWH 7 PHASE SWH V 16 16 V V 8 SWH SWH 8 V IN IN 9110 11 12 13 14 15 514131211109 Top view Bottom view Fig. 2 - Pin Configuration PIN CONFIGURATION PIN NUMBER NAME FUNCTION 1PWM PWM input The ZCD EN pin enables or disables diode emulation. When ZCD EN is LOW, diode emulation is allowed. When ZCD EN is HIGH, continuous conduction mode is forced. 2 ZCD EN ZCD EN can also be put in a high impedance mode by floating the pin. If ZCD EN is floating, the device shuts down and consumes typically 3 A (10 A max.) current. 3 N.C. Not connected 5 BOOT High side driver bootstrap voltage 4, 32 C Analog ground GND 6V Over current protection input voltage, connect this pin to power stage input voltage IN S 7 PHASE Return path of high side gate driver 8 to 11, 34 V Power stage input voltage. Drain of high side MOSFET IN 12 to 15, 28, 35 P Power ground GND 16 to 26 V Phase node of the power stage SWH 27, 33 GL Low side MOSFET gate signal 29 V Supply voltage CC 30 T /FAULT Temperature monitor output, FAULT flag output MON 31 DSBL Disable input, active low. If DSBL is floating, the device is enabled through internal pull-up ORDERING INFORMATION PART NUMBER PACKAGE MARKING CODE OPTION SiC651CD-T1-GE3 SiC651 5 V PWM optimized PowerPAK MLP55-31L SiC651ACD-T1-GE3 SiC651A 3.3 V PWM optimized SiC651DB Reference board SiC651ADB S19-0862-Rev. B, 21-Oct-2019 Document Number: 76858 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V DSBL IN T /FAULT V MON IN V V CC IN P GND P GL GND V P SWH GND V P SWH GND V P SWH GND P GND V SWH P GND V SWH P GND V SWH P GND GL P GND V V IN CC V T /FAULT IN MON V DSBL IN