X-On Electronics has gained recognition as a prominent supplier of SIHB24N80AE-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHB24N80AE-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHB24N80AE-GE3 Vishay

Hot SIHB24N80AE-GE3 electronic component of Vishay
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Part No.SIHB24N80AE-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 800V 21A (Tc) 208W (Tc) Surface Mount D2PAK (TO-263)
Datasheet: SIHB24N80AE-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.5489 ea
Line Total: USD 2.55 
Availability - 827
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
827
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 1
Multiples : 1
1 : USD 2.5489
10 : USD 2.1823
30 : USD 1.9537
100 : USD 1.7176
500 : USD 1.6118
1000 : USD 1.5664

268
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 3.509
10 : USD 3.476
50 : USD 2.332
100 : USD 2.145
500 : USD 1.771
1000 : USD 1.749

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIHB24N80AE-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHB24N80AE-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SIHB24N80AE-GE3 is an N-Channel 800V 21A (Tc) 208W (Tc) Surface Mount D2PAK (TO-263) electronic part. It is designed for advanced high-voltage switching applications and features exceptionally low on-resistance. Its TO-263 package allows it to be used in tight-fitting or power-dense applications. This part has an avalanche-rated drain-source breakdown voltage of 800 V and an on-resistance rating of 1.9 m? @ 10 V. It also features a drain-gate voltage of up to ±20 V and an operating temperature range of -55°C to 175°C. This part is RoHS compliant and UL recognized.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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