SiHP15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q on g TO-220AB Low input capacitance (C ) iss Reduced switching and conduction losses G Low gate charge (Q ) g Available Avalanche energy rated (UIS) S Material categorization: for definitions of compliance D G S please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS Computing PRODUCT SUMMARY - PC silver box / ATX power supplies V (V) at T max. 550 DS J Lighting R max. at 25 C ()V = 10 V 0.243 DS(on) GS - Two stage LED lighting Q max. (nC) 66 g Consumer electronics Q (nC) 8 gs Applications using hard switched topologies Q (nC) 14 gd - Power factor correction (PFC) Configuration Single - Two switch forward converter - Flyback converter Switch mode power supplies (SMPS) ORDERING INFORMATION Package TO-220AB SiHP15N50E-BE3 Lead (Pb)-free and halogen-free SiHP15N50E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 14.5 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 9.2 A C a Pulsed Drain Current I 28 DM Linear Derating Factor 1.25 W/C b Single Pulse Avalanche Energy E 136 mJ AS Maximum Power Dissipation P 156 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse Diode dV/dt 27 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 3.1 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S21-1110-Rev. C, 15-Nov-2021 Document Number: 91629 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP15N50E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -0.8 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.62 - V/C DS DS J D Gate-source threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 500 V, V = 0 V - - 10 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 25 DS GS J Drain-source on-state resistance R V = 10 V I = 7.5 A - 0.243 0.280 DS(on) GS D Forward transconductance g V = 30 V, I = 7.5 A - 3.9 - S fs DS D Dynamic Input capacitance C - 1162 - iss V = 0 V, GS Output capacitance C -5V = 100 V, 1- oss DS f = 1 MHz Reverse transfer capacitance C -7- rss pF Effective output capacitance, energy C -55 - a o(er) related V = 0 V to 400 V, V = 0 V DS GS Effective output capacitance, time C - 164 - o(tr) b related Total gate charge Q -33 66 g Gate-source charge Q -8V = 10 V I = 7.5 A, V = 400 V- nC gs GS D DS Gate-drain charge Q -14- gd Turn-on delay time t -15 30 d(on) Rise time t -24 48 r V = 400 V, I = 12 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -3GS g 468 d(off) Fall time t -1836 f Gate input resistance R f = 1 MHz, open drain - 0.85 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I - - 14.5 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 28 SM S Diode forward voltage V T = 25 C, I = 7.5 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 265 - ns rr T = 25 C, I = I , J F S = 7.5 A Reverse recovery charge Q -3.2 - C rr , V dI/dt = 100 A/s = 25 V R Reverse recovery current I -23 - A RRM Notes e. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS f. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S21-1110-Rev. C, 15-Nov-2021 Document Number: 91629 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000