SiHP21N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES D Fast body diode MOSFET using E series TO-220AB technology Reduced t , Q , and I rr rr RRM Low figure-of-merit (FOM): R x Q on g G Low input capacitance (C ) iss Available Increased robustness due to low Q rr Ultra low gate charge (Q ) g S D Avalanche energy rated (UIS) G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 APPLICATIONS Telecommunications PRODUCT SUMMARY - Server and telecom power supplies V (V) at T max. 650 DS J Lighting R max. at 25 C ()V = 10 V 0.176 DS(on) GS - High intensity discharge (HID) Q (Max.) (nC) 84 g - Light emitting diodes (LEDs) Q (nC) 14 Consumer and computing gs - ATX power supplies Q (nC) 24 gd Industrial Configuration Single - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package TO-220AB SiHP21N60EF-BE3 Lead (Pb)-free and halogen-free SiHP21N60EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 21 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 14 A C a Pulsed drain current I 53 DM Linear derating factor 1.8 W/C b Single pulse avalanche energy E 367 mJ AS Maximum power dissipation P 227 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 50 c Soldering recommendations (peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5.1 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 900 A/s, starting T = 25 C SD D J S21-1104-Rev. C, 15-Nov-2021 Document Number: 91595 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP21N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -0.55 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - V/C DS DS J D Gate-source threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-source on-state resistance R V = 10 V I = 11 A - 0.153 0.176 DS(on) GS D Forward transconductance g V = 30 V, I = 11 A - 7 - S fs DS D Dynamic Input capacitance C - 2030 - iss V = 0 V, GS Output capacitance C -V = 100 V, 105- oss DS f = 1 MHz Reverse transfer capacitance C -5- rss pF Effective output capacitance, energy C -86 - o(er) a related V = 0 V, V = 0 V to 480 V GS DS Effective output capacitance, time C - 299 - o(tr) b related Total gate charge Q -56 84 g Gate-source charge Q -1V = 10 V I = 11 A, V = 480 V 4- nC gs GS D DS Gate-drain charge Q -24- gd Turn-on delay time t -21 42 d(on) Rise time t -31 62 r V = 480 V, I = 11 A DD D ns R = 9.1 , V = 10 V Turn-off delay time t -5g GS 989 d(off) Fall time t -2754 f Gate input resistance R f = 1 MHz, open drain 0.2 0.56 1.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 21 S showing the A G integral reverse Pulsed diode forward current I -- 53 SM S p - n junction diode Diode forward voltage V T = 25 C, I = 11 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 135 270 ns rr T = 25 C, I = I = 11 A, J F S Reverse recovery charge Q -0.76 1.52 C rr dI/dt = 100 A/s, V = 400 V R Reverse recovery current I -11 - A RRM Notes e. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DS f. C is a fixed capacitance that gives the charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DS S21-1104-Rev. C, 15-Nov-2021 Document Number: 91595 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000