SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES Optimal design - Low area specific on-resistance D Super-247 - Low input capacitance (C ) iss - Reduced capacitive switching losses - High body diode ruggedness S - Avalanche energy rated (U ) IS G D Optimal efficiency and operation G - Low cost - Simple gate drive circuitry S - Low figure-of-merit (FOM): R x Q on g N-Channel MOSFET - Fast switching Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY V (V) at T max. 550 DS J APPLICATIONS R max. at 25 C ()V = 10 V 0.130 DS(on) GS Consumer electronics Q max. (nC) 125 g - Displays (LCD or Plasma TV Q (nC) 23 gs Server and telecom power supplies Q (nC) 37 gd - SMPS Configuration Single Industrial - Welding, induction heating, motor drives Battery chargers ORDERING INFORMATION Package Super-247 Lead (Pb)-free and halogen-free SiHS36N50D-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS Gate-source voltage 30 V V GS Gate-source voltage AC (f > 1 Hz) 30 T = 25 C 36 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 23 A C a Pulsed drain current I 112 DM Linear derating factor 3.6 W/C b Single pulse avalanche energy E 332 mJ AS Maximum power dissipation P 446 W D Operating junction and storage temperature range T , T - 55 to + 150 C J stg Drain-source voltage slope T = 125 C 24 J dV/dt V/ns d Reverse diode dV/dt 0.1 c Soldering recommendations (peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 17 A DD J g AS c. 1.6 mm from case d. I I , starting T = 25 C SD D J S21-0019-Rev. B, 18-Jan-2021 Document Number: 91514 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHS36N50D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA C/W Maximum junction-to-case (drain) -0.28 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V /T -0.52 - V temperature coefficient Reference to 25 C, I = 250 A V/C DS DS J D Gate threshold voltage (N) V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 18 A - 0.105 0.130 DS(on) GS D a Forward transconductance g V = 50 V, I = 18 A - 12.8 - S fs DS D Dynamic Input capacitance C - 3233 - iss V = 0 V, GS Output capacitance C -V = 100 V, 285- oss DS f = 1 MHz Reverse transfer capacitance C -25- rss pF Effective output capacitance, energy C - 240 - o(er) a related V = 0 V, V = 0 V to 400 V GS DS Effective output capacitance, time C - 352 - b o(tr) related Total gate charge Q -83 125 g Gate-source charge Q -2V = 10 V I = 18 A, V = 400 V3- nC gs GS D DS Gate-drain charge Q -37- gd Turn-on delay time t -33 66 d(on) Rise time t -89 134 r V = 400 V, I = 18 A, DD D ns Turn-off delay time t -7V = 10 V, R = 9.1 9119 d(off) GS g Fall time t -68102 f Gate input resistance R f = 1 MHz, open drain - 1.8 - g Drain-source body diode characteristics MOSFET symbol D Continuous source-drain diode current I -- 36 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 144 S SM Diode forward voltage V T = 25 C, I = 18 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 490 - ns rr T = 25 C, I = I = 18 A, J F S Reverse recovery charge Q -8.2 - C rr dI/dt = 100 A/s, V = 20 V R Reverse recovery current I -31 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S21-0019-Rev. B, 18-Jan-2021 Document Number: 91514 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000