SiP32101, SiP32102, SiP32103 www.vishay.com Vishay Siliconix 6.5 m, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101, SiP32102, and SiP32103 bidirectional Bi-directional ON and OFF switches feature reverse blocking capability to isolate the 7 A continuous current capability battery from the system. The internal switch has an ultra-low Ultra low R , 6.5 m (typ.) at 3.3 V on 6.5 m (typ at 3.3 V) on-resistance and operates from a Wide input voltage, 2.3 V to 5.5 V +2.3 V to +5.5 V input voltage range, making the devices Slew rate controlled turn on ideal battery-disconnect switches for high-capacity battery Ultra-low quiescent current: 15 pA (SiP32101, SiP32102) applications. EN pin with integrated pull up or pull down resistor The SiP32101, SiP32102, and SiP32103 have slew rate Available in both logic high and logic low enable options control, making them ideal in large load capacitor as well as Compact 12-Bump, 1.3 mm x 1.7 mm x 0.55 mm high-current load switching applications. These devices are WCSP package also highly efficient, consuming a mere 10 pA (typ.) current Material categorization: for definitions of compliance in shutdown and 15 pA while operating. please see www.vishay.com/doc 99912 The SiP32101 and SiP32103 have an active low enable and APPLICATIONS the SiP32102 has an active high enable. They can interface Smartphones and tablets directly with a low voltage control signal. Digital still / video cameras The SiP32101, SiP32102, and SiP32103 are available in an Portable meters and test instruments ultra compact 12-Bump, 1.3 mm x 1.7 mm, 0.4 mm pitch Communication devices with embedded batteries WCSP package with top side lamination. The device Portable medical and healthcare systems operates over the temperature of -40 C to +85 C. Data storage Battery bank TYPICAL APPLICATION CIRCUIT System Charging Block Charging System Connector System Power Input Control Power Input and Regulator Charger Output Port B Port A To Battery Pack Slew Rate Gate EN, EN Drive Logic LevelShift SiP32101, SiP32102 GND Fig. 1 - Typical Application Circuit ORDERING INFORMATION PART NUMBER MARKING ENABLE ENABLE PULL RESISTOR PACKAGE TEMPERATURE SiP32101DB-T1-GE1 32101 Low enable Pull Low 12-Bump, 1.3 mm x 1.7 mm, SiP32102DB-T1-GE1 32102 High enable Pull Low 0.4 mm pitch -40 C to +85 C SiP32102DB-T5-GE1 32102 High enable Pull Low WCSP package SiP32103DB-T1-GE1 32103 Low enable Pull High SiP32101EVB - - - - SiP32102EVB - - - Evaluation Board - SiP32103EVB - - - - Note GE1 denotes halogen-free and RoHS-compliant MARKING 12 3 4 A FYWL B 32101 C S15-0598-Rev. G, 30-Mar-15 Document Number: 62617 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiP32101, SiP32102, SiP32103 www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER CONDITIONS LIMITUNIT Reference to GND -0.3 to +6 V , V PA PB a Pulse at 1 ms reference to GND -1.6 V V Reference to GND -0.3 to +6 EN Maximum Continuous Switch Current 7 A Maximum Pulse Current 100 s pulse 15 ESD (HBM) 8000 V Operating Temperature -40 to +85 Operating Junction Temperature 125 C Storage Temperature -65 to +150 b Thermal Resistance ( ) 73 C/W JA b, c Power Dissipation (P ) T = 70 C 1096 mW D A Notes a. Negative current injection up to 300 mA. b. All bumps soldered to 1 inch x 1 inch, 2 oz. copper, 4 layers PC board. c. Derate 13.7 mW/C above T = 70 C. A Stresses beyond those listed underAbsolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. SPECIFICATIONS TEST CONDITIONS UNLESS SPECIFIED LIMITS V = V /V = 2.3 V to 5.5 V, T = -40 C to 85 C IN PA PB A PARAMETER SYMBOL UNIT a b a (Typical values are at V , V = 4.2 V, MIN. TYP. MAX. PA PB C , C = 0.1 F, T = 25 C) PA PB A Power Supply c Operating Voltage V 2.3 - 5.5 V PA/PB V = 0 V (for SiP32101), EN V = V (for SiP32102), - 0.015 300 nA EN IN no load Quiescent Current I Q V = 0 V (for SiP32103), EN - 8.2 15 A no load V = V (for SiP32101), EN IN Shutdown Current I V = 0 V (for SiP32102), - 0.010 300 nA SHDN EN no load Internal FET V /V = 2.3 V, I = 500 mA, T = 25 C - 8 13 PA PB L A On-Resistance R m DS(on) V /V = 3.3 V, I = 500 mA, T = 25 C - 6.5 10 PA PB L A Control c EN / EN Input Logic-Low Voltage V -- 0.4 IL V c EN / EN Input Logic-High Voltage V 1.4 - - IH EN / EN Pull Resistor R V /V = 5.5 V, V (or V ) = 2.3 V - 500 700 k EN PA PB EN EN Timing Output Turn-On Delay Time t -0.5 - d(on) Output Turn-On Rise Time t -1 - r V = 4.2 V, R = 100 , C = 0.1 F, T = 25 C ms IN L L A Output Turn-Off Delay Time t -2.4 - d(off) Output Turn-Off Fall Time t -1 - f Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For V outside this range consult typical EN, EN threshold curve. IN S15-0598-Rev. G, 30-Mar-15 Document Number: 62617 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000