SiP32101, SiP32102, SiP32103, SiP32104 www.vishay.com Vishay Siliconix 6.5 m, Bidirectional Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101, SiP32102, SiP32103, and SiP32104 are low Bidirectional on and off resistance bidirectional load switches. They isolate A and B 7 A continuous current capability ports at off state. The parts have an ultra low 6.5 m (typ. at Ultra low R , 6.5 m (typ.) at 3.3 V on 3.3 V) on-resistance and operate from a + 2.3 V to + 5.5 V Wide input voltage, 2.3 V to 5.5 V input voltage range, making the devices ideal battery-disconnect switches for high capacity battery Slew rate controlled turn on applications and multi-source power switches where Low quiescent current: 110 nA bidirectional on/off control is required. The parts have High / low EN, and integrated pull options identical A and B ports conducting current in both directions Compact 12-bump, 1.3 mm x 1.7 mm x 0.55 mm equally well. WCSP package The SiP32101, SiP32102, SiP32103, and SiP32104 have Material categorization: for definitions of compliance slew rate control minimizing switch on in-rush current in please see www.vishay.com/doc 99912 large load capacitor. These devices are also highly efficient, featuring low operating and shutdown currents. APPLICATIONS The SiP32101, SiP32102, SiP32103, and SiP32104 can Smartphones and tablets interface directly with a low voltage control signal. The Digital still / video cameras SiP32101, SiP32103, and SiP32104 have an active low Portable meters and test instruments enable with different EN pull options. The SiP32102 has an active high enable. The series provides choices to minimize Communication devices with embedded batteries enable control circuit current depending on application Portable medical and healthcare systems requirement. Data storage The SiP32101, SiP32102, SiP32103, and SiP32104 are Battery bank available in an ultra compact 12-bump, 1.3 mm x 1.7 mm, 0.4 mm pitch WCSP package with top side lamination. The device operates over the temperature of -40 C to +85 C. TYPICAL APPLICATION CIRCUIT Charging System connector System Power Input control power input and regulator System charging block Charger output Port B Port A To battery pack Slew rate gate EN drive logic level shift GND Fig. 1 - Typical Application Circuit ORDERING INFORMATION PART NUMBER MARKING ENABLE ENABLE PULL RESISTOR PACKAGE TEMPERATURE SiP32101DB-T1-GE1 32101A Low Enable pull low 12-bump, 1.3 mm x 1.7 mm, SiP32102DB-T1-GE1 32102A High Enable pull low 0.4 mm pitch -40 C to +85 C SiP32103DB-T1-GE1 32103A Low Enable pull high WCSP package SiP32104DB-T1-GE1 32104A Low No pull SiP32101EVB - - - - SiP32102EVB - - - - Evaluation board SiP32103EVB - - - - SiP32104EVB - - - - Note GE1 denotes halogen-free and RoHS-compliant S21-0020-Rev. C, 01-Feb-2021 Document Number: 78628 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiP32101, SiP32102, SiP32103, SiP32104 www.vishay.com Vishay Siliconix MARKING FORMAT 12 3 4 A FYWL B 32101A C ABSOLUTE MAXIMUM RATINGS PARAMETER CONDITIONS LIMITUNIT Reference to GND -0.3 to +6 V , V PA PB a Pulse at 1 ms reference to GND -1.6 V V Reference to GND -0.3 to +6 EN Maximum continuous switch current 7 A Maximum pulse current 100 s pulse 15 ESD (HBM) 8000 V Operating temperature -40 to +85 Operating junction temperature 125 C Storage temperature -65 to +150 b Thermal resistance ( ) 73 C/W JA b, c Power dissipation (P ) T = 70 C 1096 mW D A Notes a. Negative current injection up to 300 mA b. All bumps soldered to 1 x 1 , 2 oz. copper, 4 layers PC board c. Derate 13.7 mW/C above T = 70 C A Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. SPECIFICATIONS TEST CONDITIONS UNLESS SPECIFIED LIMITS V = V /V = 2.3 V to 5.5 V, T = -40 C to 85 C IN PA PB A PARAMETER SYMBOL UNIT a b a (Typical values are at V , V = 4.2 V, MIN. TYP. MAX. PA PB C , C = 0.1 F, T = 25 C) PA PB A Power Supply c Operating voltage V 2.3 - 5.5 V PA/PB V = 0 V (for SiP32101 and SiP32104), EN V = V (for SiP32102), - 110 140 nA EN IN no load Quiescent current I Q V = 0 V (for SiP32103), EN - 8.2 15 A no load V = V (for SiP32101, SiP32103, and SiP32104), EN IN Shutdown current I V = 0 V (for SiP32102), - 110 140 nA SHDN EN no load Internal FET V /V = 2.3 V, I = 500 mA, T = 25 C - 8 13 PA PB L A On-resistance R m DS(on) V /V = 3.3 V, I = 500 mA, T = 25 C - 6.5 10 PA PB L A Control c EN input logic-low voltage V -- 0.4 IL V c EN input logic-high voltage V 1.4 - - IH EN input logic hysteresis V - > 200 - mV I(HYS) EN pull resistor R V /V = 5.5 V, V (or V ) = 2.3 V 350 500 700 k EN PA PB EN EN S21-0020-Rev. C, 01-Feb-2021 Document Number: 78628 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000