3.3 mm3.3 mm SiSA10BDN www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK 1212-8PT D D TrenchFET Gen IV power MOSFET 88 DD 77 DD 66 100 % R and UIS tested g 55 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 00.75 mm 1 D APPLICATIONS 2 S 3 S 4 High power density DC/DC S 11 G Synchronous rectification Top View Bottom View VRMs and embedded DC/DC G Battery protection PRODUCT SUMMARY V (V) 30 DS R max. () at V = 10 V 0.0036 DS(on) GS S R max. () at V = 4.5 V 0.0050 DS(on) GS N-Channel MOSFET Q typ. (nC) 11.7 g a I (A) 104 D Configuration Single ORDERING INFORMATION Package PowerPAK 1212-8PT Lead (Pb)-free and halogen-free SiSA10BDN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 30 DS V Gate-source voltage V +20, -16 GS T = 25 C 104 C T = 70 C 83 C Continuous drain current (T = 150 C) I J D b, c T = 25 C 26 A b, c T = 70 C 21 A A Pulsed drain current (t = 100 s) I 150 DM T = 25 C 57 C Continuous source-drain diode current I S b, c T = 25 C 3.4 A Single pulse avalanche current I 20 AS L = 0.1 mH Single pulse avalanche energy E 20 mJ AS T = 25 C 63 C T = 70 C 40 C Maximum power dissipation P W D b, c T = 25 C 3.8 A b, c T = 70 C 2.4 A Operating junction and storage temperature range T , T -55 to +150 J stg C d, e Soldering recommendations (peak temperature) 260 Notes a. Based on T = 25 C C b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8PT is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S21-1167-Rev. A, 29-Nov-2021 Document Number: 63176 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.33m mmmSiSA10BDN www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SMYBOL TYPICAL MAXIMUM UNIT a, b Maximum junction-to-ambient t 10 s R 26 33 thJA C/W Maximum junction-to-case (drain) Steady state R 1.6 2 thJC Notes a. Surface mounted on 1 x 1 FR4 board b. Maximum under steady state conditions is 67 C/W SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 30 - - DS GS D (c) V Drain-source breakdown voltage V = 0 V, I = 70 A, GS D(aval) V 36 - - DSt (transient) t 50 ns transcient V temperature coefficient V /T -18 - DS DS J I = 250 A mV/C D V temperature coefficient V /T --3.8- GS(th) GS(th) J Gate-source threshold voltage V V = V , I = 250 A 1.2 - 2.4 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = +20, -16 V - - 100 nA GSS DS GS V = 30 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 30 V, V = 0 V, T = 55 C - - 10 DS GS J a On-state drain current I V 5 V, V = 10 V 25 - - A D(on) DS GS V = 10 V, I = 10 A - 0.0023 0.0036 GS D a Drain-source on-state resistance R DS(on) V = 4.5 V, I = 7 A - 0.0035 0.0050 GS D a Forward transconductance g V = 10 V, I = 20 A - 68 - S fs DS D b Dynamic Input capacitance C - 1710 - iss Output capacitance C - 655 - pF oss V = 15 V, V = 0 V, f = 1 MHz DS GS Reverse transfer capacitance C -68 - rss C /C ratio - 0.040 0.080 rss iss V = 15 V, V = 10 V, I = 10 A - 24.1 36.2 DS GS D Total gate charge Q g - 11.7 17.6 Gate-source charge Q V = 15 V, V = 4.5 V, I = 10 A -4.2 - nC gs DS GS D Gate-drain charge Q -2.8- gd Output charge Q V = 15 V, V = 0 V - 18 - oss DS GS Gate resistance R f = 1 MHz 0.3 1.3 2.6 g Turn-on delay time t -7 15 d(on) Rise time t -20 40 r V = 15 V, R = 1.5 DD L I 10 A, V = 10 V, R = 1 D GEN g Turn-off delay time t -2550 d(off) Fall time t -10 20 f ns Turn-on delay time t -17 35 d(on) Rise time t -35 70 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 D GEN g Turn-off delay time t -3060 d(off) Fall time t -15 30 f S21-1167-Rev. A, 29-Nov-2021 Document Number: 63176 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000