2.05 mm2.05 mm SQA411CEJW www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PowerPAK SC-70W-6L Single TrenchFET power MOSFET D DD 66 AEC-Q101 qualified SS 55 44 Wettable flank terminals 100 % R and UIS tested g Material categorization: 11 for definitions of compliance please see SS 22 DD 77 www.vishay.com/doc 99912 33 DD 11 G S Top View Bottom View Marking Code: Q8XXXX G PRODUCT SUMMARY V (V) -60 DS R () at V = -10 V 0.1550 DS(on) GS R () at V = -4.5 V 0.2130 DS(on) GS D I (A) -6.46 D P-Channel MOSFET Configuration Single ORDERING INFORMATION Package PowerPAK SC-70W-6L SQA411CEJW Lead (Pb)-free and halogen-free (for detailed order number please see www.vishay.com/doc 79776) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -60 DS V Gate-source voltage V 20 GS T = 25 C -6.46 C Continuous drain current I D T = 125 C -3.73 C a Continuous source current (diode conduction) I -9 A S b Pulsed drain current I -20 DM Single pulse avalanche current I -14 AS L = 0.1 mH Single pulse avalanche energy E 9.8 mJ AS T = 25 C 13.6 C Maximum power dissipation P W D T = 125 C 4.5 C Operating junction and storage temperature range T , T -55 to +175 J stg C d, e Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-ambient PCB mount R 90 thJA C/W Junction-to-case (drain) R 11 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70W-6L is a leadless package and features wettable flank terminals. The end of the lead terminal is plated with tin. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S21-1147-Rev. A, 06-Dec-2021 Document Number: 63171 1 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2.05 mm05 mmSQA411CEJW www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -60 - - DS GS D V Gate-source threshold voltage V V = V , I = -250 A -1.5 -2.0 -2.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -60 V - - -1 GS DS Zero gate voltage drain current I V = 0 V V = -60 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -60 V, T = 175 C - - -250 GS DS J a On-state drain current I V = -10 V V -5 V -6 - - A D(on) GS DS V = -10 V I = -3.5 A - 0.1255 0.1550 GS D V = -10 V I = -3.5 A, T = 125 C - - 0.2639 GS D J a Drain-source on-state resistance R DS(on) V = -10 V I = -3.5 A, T = 175 C - - 0.3261 GS D J V = -4.5 V I = -3 A - 0.1645 0.2130 GS D b Forward transconductance g V = -15 V, I = -3.5 A - 6 - S fs DS D b Dynamic Input capacitance C - 421 590 iss Output capacitance C V = 0 V V = -25 V, f = 1 MHz -64 90 pF oss GS DS Reverse transfer capacitance C -35 50 rss c Total gate charge Q - 10.2 15.5 g c Gate-source charge Q V = -10 V V = -30 V, I = -6.5 A -2.2 - nC gs GS DS D c Gate-drain charge Q -2.6 - gd Gate resistance R f = 1 MHz 2.50 5.18 7.80 g c Turn-on delay time t -7 12 d(on) c Rise time t -4 7 r V = -30 V, R = 12 DD L ns c I -2.5 A, V = -10 V, R = 1 Turn-off delay time t D GEN g -17 29 d(off) c Fall time t -4 7 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- -20 A SM Forward voltage V I = -3.5 A, V = 0 V - -0.88 -1.2 V SD F GS Body diode reverse recovery time t -24 48 ns rr Body diode reverse recovery charge Q -28 56 nC rr I = -2 A, di/dt = 100 A/s F Reverse recovery fall time t -21- a ns Reverse recovery rise time t -3 - b Body diode peak reverse recovery current I --3.4 - A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1147-Rev. A, 06-Dec-2021 Document Number: 63171 2 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000