X-On Electronics has gained recognition as a prominent supplier of SQJ968EP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQJ968EP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQJ968EP-T1-GE3 Vishay

SQJ968EP-T1-GE3 electronic component of Vishay
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Part No.SQJ968EP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET, 2 N CH, 60V, 18A, POWERPAK SO-8
Datasheet: SQJ968EP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1411 ea
Line Total: USD 1.14 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1411
10 : USD 0.9287
100 : USD 0.693
500 : USD 0.5906
1000 : USD 0.5866

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Operating Temperature Min
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We are delighted to provide the SQJ968EP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJ968EP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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D 1 D 2 5.13 mm SQJ968EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) 60 DS AEC-Q101 Qualified R ( ) at V = 10 V 0.0336 DS(on) GS 100 % R and UIS Tested g R ( ) at V = 4.5 V 0.0444 DS(on) GS Material categorization: I (A) per leg 18 D For definitions of compliance please see Configuration Dual www.vishay.com/doc 99912 PowerPAK SO-8L Dual D 1 D 2 G 1 G 2 4 G 2 3 S 2 2 G 1 S 1 S 1 2 Bottom View S 1 N-Channel MOSFET N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ968EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 18 C a Continuous Drain Current I D T = 125 C 10.5 C a Continuous Source Current (Diode Conduction) I 23 A S b Pulsed Drain Current I 72 DM Single Pulse Avalanche Current I 9 AS L = 0.1 mH Single Pulse Avalanche Energy E 4mJ AS T = 25 C 25 C b Maximum Power Dissipation P W D T = 125 C 8 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 85 thJA C/W Junction-to-Case (Drain) R 6 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-0177-Rev. A, 28-Jan-13 Document Number: 62817 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 6.15 mm SQJ968EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 30 - - A D(on) GS DS V = 10 V I = 4.8 A - 0.0280 0.0336 GS D V = 10 V I = 4.8 A, T = 125 C - - 0.0900 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 4.8 A, T = 175 C - - 0.1430 GS D J V = 4.5 V I = 4.2 A - 0.0370 0.0444 GS D b Forward Transconductance g V = 15 V, I = 4.8 A - 16 - S fs DS D b Dynamic Input Capacitance C - 571 714 iss Output Capacitance C -V = 0 V V = 30 V, f = 1 MHz98123 pF oss GS DS Reverse Transfer Capacitance C -3848 rss c Total Gate Charge Q - 12.3 18.5 g c Gate-Source Charge Q -1V = 10 V V = 30 V, I = 4.5 A.9- nC gs GS DS D c Gate-Drain Charge Q -2.6- gd Gate Resistance R f = 1 MHz 2 3.94 6 g c Turn-On Delay Time t -8 12 d(on) c Rise Time t - 9 13.5 r V = 30 V, R = 30 DD L ns c I 1 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t -19.529 d(off) c Fall Time t -6.510 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 32 A SM Forward Voltage V I = 3.1 A, V = 0 V - 0.8 1.1 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0177-Rev. A, 28-Jan-13 Document Number: 62817 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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