333 3 SS12P2L, SS12P3L www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Schottky Barrier Rectifiers FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Guardring for overvoltage protection Low forward voltage drop, low power losses 1 High efficiency 2 Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak SMPC (TO-277A) of 260 C AEC-Q101 qualified available K Anode 1 - Automotive ordering code: base P/NHM3 Cathode Anode 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D Models For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 12 A F(AV) Case: SMPC (TO-277A) V 20 V, 30 V RRM Molding compound meets UL 94 V-0 flammability rating I 280 A FSM Base P/N-M3 - halogen-free, RoHS-compliant, and E 20 mJ AS commercial grade Base P/NHM3 X - halogen-free, RoHS-compliant and V at I = 12 A 0.38 V F F AEC-Q101 qualified T max. 150 C J ( X denotes revision code e.g. A, B,.....) Package SMPC (TO-277A) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS12P2L SS12P3L UNIT Device marking code S122 S123 Maximum repetitive peak reverse voltage V 20 30 V RRM Maximum average forward rectified current (fig. 1) I 12 A F(AV) Peak forward surge current 10 ms single half sine-wave I 280 A FSM superimposed on rated load Non-repetitive avalanche energy E 20 mJ AS at I = 2.0 A, T = 25 C AS J Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 24-Apr-2020 Document Number: 89002 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS12P2L, SS12P3L www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 6 A 0.41 - F T = 25 C A I = 12 A 0.48 0.56 F (1) Maximum instantaneous forward voltage V V F I = 6 A 0.30 - F T = 125 C A I = 12 A 0.38 0.46 F T = 25 C 150 1000 A A (2) Maximum reverse current Rated V I R R T = 125 C 59 120 mA A Typical junction capacitance 4.0 V, 1 MHz C 930 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL SS12P2L SS12P3L UNIT (1) R 60 JA Typical thermal resistance C/W R 3 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS12P3L-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel SS12P3L-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) SS12P3LHM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) SS12P3LHM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 24-Apr-2020 Document Number: 89002 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000