SS12P4CHM3_A/H Vishay

333 3 SS12P4C www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Schottky Barrier Rectifier FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency Low thermal impedance 1 Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C AEC-Q101 qualified available SMPC (TO-277A) - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance K Anode 1 please see www.vishay.com/doc 99912 Cathode Anode 2 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection 3D Models applications. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating I 2 x 6.0 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 40 V RRM commercial grade I 150 A FSM Base P/NHM3 X - halogen-free, RoHS-compliant and E 20 mJ AS AEC-Q101 qualified V at I = 6.0 A 0.40 V F F ( X denotes revision code e.g. A, B,.....) T max. 125 C J Terminals: matte tin plated leads, solderable per Package SMPC (TO-277A) J-STD-002 and JESD 22-B102 Circuit configuration Common cathode M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS12P4C UNIT Device marking code S124C Maximum repetitive peak reverse voltage V 40 V RRM total device 12 A (1) Maximum average forward rectified current (fig. 1) I F(AV) per diode 6.0 (2) Maximum average forward rectified current total device I 3.5 A F(AV) Peak forward surge current 10 ms single half sine-wave superimposed on rated load I 150 A FSM per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 20 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, at T = 25 C per diode I 1.0 A p J RRM Operating junction and storage temperature range T T -55 to +125 C J, STG Notes (1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink (2) Free air, mounted on recommended copper pad area Revision: 24-Apr-2020 Document Number: 89141 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS12P4C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 1 A 0.34 - F I = 3 A T = 25 C 0.40 - F A I = 6 A 0.46 0.52 F (1) Instantaneous forward voltage per diode V V F I = 1 A 0.24 - F I = 3 A T = 100 C 0.31 - F A I = 6 A 0.40 0.45 F T = 25 C 129 500 A A (2) Reverse current per diode Rated V I R R T = 100 C 11.9 25 mA A Typical junction capacitance per diode 4.0 V, 1 MHz C 400 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS12P4C UNIT (1) R 100 JA Typical thermal resistance C/W (2) R 3 JM Notes (1) Free air, mounted on recommended copper pad area. Thermal resistance R - junction to ambient JA (2) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance R - junction to mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS12P4C-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel SS12P4C-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) SS12P4CHM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) SS12P4CHM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 14 Notes (1) T = 100 C M Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 12 100 mm fin heat sink, T measured at the terminal of cathode M band (R = 3 C/W) JM 10 Free air, mounted on recommended copper pad area (R = 100 C/W) JA 8 6 (2) T = 25 C A 4 2 0 0 25 50 75 100 125 150 Ambient Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Revision: 24-Apr-2020 Document Number: 89141 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DC Forward Current (A)