333 3 SS10P2CL, SS10P3CL www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Dual Common Cathode Schottky Rectifiers FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency 1 Low thermal resistance 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPC (TO-277A) AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Anode 1 K Material categorization: for definitions of compliance Cathode Anode 2 please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, an d 3D Models polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPC (TO-277A) I 2 x 5.0 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 20 V, 30 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 200 A FSM commercial grade E 20 mJ Base P/NHM3 X - halogen-free, RoHS-compliant and AS AEC-Q101 qualified V at I = 5 A 0.338 V F F ( X denotes revision code e.g. A, B,.....) T max. 150 C J Terminals: matte tin plated leads, solderable per Package SMPC (TO-277A) J-STD-002 and JESD 22-B102 Circuit configuration Common cathode M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS10P2CL SS10P3CL UNIT Device marking code S102CL S103CL Maximum repetitive peak reverse voltage V 20 30 V RRM total device 10 A Maximum average forward rectified current (fig. 1) I F(AV) per diode 5.0 Peak forward surge current 10 ms single half sine-wave I 200 A FSM superimposed on rated load Non-repetitive avalanche energy at 25 C, I = 2 A per diode E 20 mJ AS AS Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 30-Jul-2021 Document Number: 89036 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS10P2CL, SS10P3CL www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.5 A 0.391 - F T = 25 C A I = 5.0 A 0.440 0.52 F Instantaneous forward voltage (1) V V F per diode I = 2.5 A 0.272 - F T = 125 C A = 5.0 A 0.338 0.42 I F T = 25 C 95 850 A A (2) Reverse current per diode Rated V I R R T = 125 C 37 55 mA A Typical junction capacitance per diode 4.0 V, 1 MHz C 560 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL SS10P2CL SS10P3CL UNIT (1) R 60 JA Typical thermal resistance per diode C/W R 3 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS10P3CL-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel SS10P3CL-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) SS10P3CLHM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) SS10P3CLHM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 30-Jul-2021 Document Number: 89036 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000