333 3 SL02-M, SL03-M www.vishay.com Vishay Semiconductors Schottky Rectifier Surface-Mount FEATURES eSMP Series For surface mounted applications Low-profile package Ideal for automated placement 1 2 Low power loss, high efficiency Oxide planar chip junction 23020 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Meets JESD 201 class 2 whisker test 23019 Wave and reflow solderable SMF (DO-219AB) AEC-Q101 qualified ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models MECHANICAL DATA Case: SMF (DO-219AB) Polarity: color band denotes cathode end Weight: approx. 15 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), MOQ = 50K 08/3K per 7 reel (8 mm tape), MOQ = 30K Circuit configuration: single PARTS TABLE PART ORDERING CODE MARKING REMARKS SL02-M SL02-M-18 or SL02-M-08 U2 Tape and reel SL03-M SL03-M-18 or SL03-M-08 U3 Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT SL02-M V 20 V RRM Maximum repetitive peak reverse voltage SL03-M V 30 V RRM SL02-M V 14 V RMS Maximum RMS voltage SL03-M V 21 V RMS SL02-M V 20 V DC Maximum DC blocking voltage SL03-M V 30 V DC Maximum average forward rectified current T = 109 C I 1.1 A L F(AV) Peak forward surge current 8.3 ms single I 40 A FSM half sine-wave THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 180 K/W thJA Maximum operating junction temperature T 125 C j Storage temperature range T -55 to +150 C stg Note (1) Mounted on epoxy substrate with 3 mm x 3 mm Cu pads ( 40 m thick) Rev. 2.3, 24-Oct-2019 Document Number: 85190 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SL02-M, SL03-M www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SL02-M V 0.360 0.385 V F (1) Instantaneous forward voltage I = 0.5 A F SL03-M V 0.395 0.43 V F SL02-M V 0.420 V F Typical instantaneous forward voltage I = 1.1 A F SL03-M V 0.450 V F T = 25 C SL02-M I 250 A A R T = 100 C SL02-M I 8mA A R Maximum DC reverse current at rated DC blocking voltage T = 25 C SL03-M I 130 A A R T = 100 C SL03-M I 6mA A R SL02-M t < 10 ns rr Reverse recovery time SL03-M t < 10 ns rr Note (1) Pulse test: 300 s pulse width, 1 % duty cycle TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1.5 10 T = 100 C j 1 1.0 T = 75 C j 0.1 T = 50 C j 0.01 0.5 T = 25 C j 0.001 Pulse width = 300 s 1 % duty cycle 0 0.0001 0 10 30 50 70 90 110 130 150 0 0.2 0.4 0.6 0.8 1.0 17379 17381 Lead Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics - SL02 250 10 000 T = 100 C j 200 1000 T = 75 C j 150 T = 50 C j 100 T = 25 C j 100 SL02 10 50 1 10 0 5 10 15 20 25 0 2 4 6 8 10 12 17382 Reverse Voltage (V) 17380 SL02 Reverse Voltage (V) Fig. 2 - Typical Junction Capacitance Fig. 4 - Typical Reverse Current Characteristics - SL02 Rev. 2.3, 24-Oct-2019 Document Number: 85190 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Junction Capacitance (pF) Average Forward Current (A) Instantaneous Reverse Current (A) Instantaneous Forward Current (A)