SD101AWS, SD101BWS, SD101CWS www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES For general purpose applications The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast DESIGN SUPPORT TOOLS click logo to get started switching and low logic level applications AEC-Q101 qualified available Models Base P/N-E3 - RoHS-compliant, commercial grade Available Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified MECHANICAL DATA Material categorization: for definitions of compliance Case: SOD-323 please see www.vishay.com/doc 99912 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS CONFIGURATION SD101AWS-E3-08 or SD101AWS-E3-18 SD101AWS Single SA SD101AWS-HE3-08 or SD101AWS-HE3-18 SD101BWS-E3-08 or SD101BWS-E3-18 SD101BWS Single SB Tape and reel SD101BWS-HE3-08 or SD101BWS-HE3-18 SD101CWS-E3-08 or SD101CWS-E3-18 SD101CWS Single SC SD101CWS-HE3-08 or SD101CWS-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT SD101AWS V 60 V RRM Repetitive peak reverse voltage SD101BWS V 50 V RRM SD101CWS V 40 V RRM (1) Power dissipation (infinite heatsink) P 150 mW tot Forward continuous current I 30 mA F Maximum single cycle surge 10 s square wave I 2A FSM Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 650 K/W thJA (1) Junction temperature T 125 C j Operating temperature range T -55 to +125 C op Storage temperature range T -65 to +150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 2.1, 14-Oct-16 Document Number: 85680 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SD101AWS, SD101BWS, SD101CWS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SD101AWS V 60 V (BR) Reverse breakdown voltage I = 10 A SD101BWS V 50 V R (BR) SD101CWS V 40 V (BR) V = 50 V SD101AWS I 200 nA R R Leakage current V = 40 V SD101BWS I 200 nA R R V = 30 V SD101CWS I 200 nA R R SD101AWS V 410 mV F I = 1 mA SD101BWS V 400 mV F F SD101CWS V 390 mV F Forward voltage drop SD101AWS V 1000 mV F I = 15 mA SD101BWS V 950 mV F F SD101CWS V 900 mV F SD101AWS C 2.0 ns D Junction capacitance V = 0 V, f = 1 MHz SD101BWS C 2.1 ns R D SD101CWS C 2.2 ns D I = I = 5 mA, F R Reverse recovery time t 1ns rr recover to 0.1 I R TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 10 A B 125 C C 10 100 C 1 75 C 1 50 C 0.1 0.1 25 C 0.01 0.01 0510 20 30 400 0 0.2 0.4 0.6 0.8 1.0 18479 V - Reverse Voltage (V) R 18477 V - Forward Voltage (V) F Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage Fig. 3 - Typical Variation of Reverse Current at Various Temperatures 100 2.0 A T = 25 C j 1.8 B C 1.6 80 1.4 1.2 60 A B C 1.0 0.8 40 0.6 0.4 20 0.2 0 0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 V - Reverse Voltage (V) V - Forward Voltage (V) 18480 18478 R F Fig. 2 - Typical Forward Conduction Curve Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage Rev. 2.1, 14-Oct-16 Document Number: 85680 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) I - Forward Current (mA) F F C - Typical Capacitance (pF) I - Reverse Current (A) D R
