SD101AW-E3-18 Vishay

SD101AW, SD101BW, SD101CW www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATRUES For general purpose applications The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a click logo to get started DESIGN SUPPORT TOOLS PN junction guardring AEC-Q101 qualified available Models Base P/N-E3 - RoHS-compliant, commercial grade Available Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified MECHANICAL DATA Material categorization: for definitions of compliance Case: SOD-123 please see www.vishay.com/doc 99912 Weight: approx. 10.3 mg Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS CONFIGURATION SD101AW-E3-08 or SD101AW-E3-18 SD101AW Single SA SD101AW-HE3-08 or SD101AW-HE3-18 SD101BW-E3-08 or SD101BW-E3-18 SD101BW Single SB Tape and reel SD101BW-HE3-08 or SD101BW-HE3-18 SD101CW-E3-08 or SD101CW-E3-18 SD101CW Single SC SD101CW-HE3-08 or SD101CW-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT SD101AW V 60 V RRM Repetitive peak reverse voltage SD101BW V 50 V RRM SD101CW V 40 V RRM (1) Power dissipation (infinite heatsink) P 400 mW tot Forward continuous current I 30 mA F Maximum single cycle surge 10 s square wave I 2A FSM Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 300 K/W thJA (1) Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +125 C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.9, 23-Feb-18 Document Number: 85679 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SD101AW, SD101BW, SD101CW www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SD101AW V 60 V (BR) Reverse breakdown voltage I = 10 A SD101BW V 50 V R (BR) SD101CW V 40 V (BR) V = 50 V SD101AW I 200 nA R R Leakage current V = 40 V SD101BW I 200 nA R R V = 30 V SD101CW I 200 nA R R SD101AW V 410 mV F I = 1 mA SD101BW V 400 mV F F SD101CW V 390 mV F Forward voltage drop SD101AW V 1000 mV F I = 15 mA SD101BW V 950 mV F F SD101CW V 900 mV F SD101AW C 2pF D Diode capacitance V = 0 V, f = 1 MHz SD101BW C 2.1 pF R D SD101CW C 2.2 pF D Reverse recovery time I = I = 5 mA, recover to 0.1 I t 1ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 10 A B 125 C C 10 100 C 1 75 C 1 50 C 0.1 0.1 25 C 0.01 0.01 0510 20 30 400 0 0.2 0.4 0.6 0.8 1.0 18479 V - Reverse Voltage (V) R V - Forward Voltage (V) 18477 F Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage Fig. 3 - Typical Variation of Reverse Current at Various Temperatures 100 2.0 A T = 25 C j 1.8 B C 1.6 80 1.4 1.2 60 A B C 1.0 0.8 40 0.6 20 0.4 0.2 0 0 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 18478 V - Forward Voltage (V) V - Reverse Voltage (V) 18480 R F Fig. 2 - Typical Forward Conduction Curve Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage Rev. 1.9, 23-Feb-18 Document Number: 85679 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) I - Forward Current (mA) F F C - Typical Capacitance (pF) D I - Reverse Current (A) R