SD101AWS, SD101BWS, SD101CWS
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Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
For general purpose applications
The SD101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
DESIGN SUPPORT TOOLS click logo to get started
switching and low logic level applications
AEC-Q101 qualified available
Models
Base P/N-E3 - RoHS-compliant, commercial grade
Available
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
MECHANICAL DATA
Material categorization: for definitions of compliance
Case: SOD-323
please see www.vishay.com/doc?99912
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
CIRCUIT
PART ORDERING CODE TYPE MARKING REMARKS
CONFIGURATION
SD101AWS-E3-08 or SD101AWS-E3-18
SD101AWS Single SA
SD101AWS-HE3-08 or SD101AWS-HE3-18
SD101BWS-E3-08 or SD101BWS-E3-18
SD101BWS Single SB Tape and reel
SD101BWS-HE3-08 or SD101BWS-HE3-18
SD101CWS-E3-08 or SD101CWS-E3-18
SD101CWS Single SC
SD101CWS-HE3-08 or SD101CWS-HE3-18
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
SD101AWS V 60 V
RRM
Repetitive peak reverse voltage SD101BWS V 50 V
RRM
SD101CWS V 40 V
RRM
(1)
Power dissipation (infinite heatsink) P 150 mW
tot
Forward continuous current I 30 mA
F
Maximum single cycle surge 10 s square wave I 2A
FSM
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
(1)
Thermal resistance junction to ambient air R 650 K/W
thJA
(1)
Junction temperature T 125 C
j
Operating temperature range T -55 to +125 C
op
Storage temperature range T -65 to +150 C
stg
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 2.1, 14-Oct-16 Document Number: 85680
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000SD101AWS, SD101BWS, SD101CWS
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
SD101AWS V 60 V
(BR)
Reverse breakdown voltage I = 10 A SD101BWS V 50 V
R (BR)
SD101CWS V 40 V
(BR)
V = 50 V SD101AWS I 200 nA
R R
Leakage current V = 40 V SD101BWS I 200 nA
R R
V = 30 V SD101CWS I 200 nA
R R
SD101AWS V 410 mV
F
I = 1 mA SD101BWS V 400 mV
F F
SD101CWS V 390 mV
F
Forward voltage drop
SD101AWS V 1000 mV
F
I = 15 mA SD101BWS V 950 mV
F F
SD101CWS V 900 mV
F
SD101AWS C 2.0 ns
D
Junction capacitance V = 0 V, f = 1 MHz SD101BWS C 2.1 ns
R D
SD101CWS C 2.2 ns
D
I = I = 5 mA,
F R
Reverse recovery time t 1ns
rr
recover to 0.1 I
R
TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
100
10
A
B
125 C
C
10
100 C
1
75 C
1
50 C
0.1
0.1
25 C
0.01
0.01
0510 20 30 400
0 0.2 0.4 0.6 0.8 1.0
18479
V - Reverse Voltage (V)
R
18477 V - Forward Voltage (V)
F
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
100
2.0
A
T = 25 C
j
1.8
B
C
1.6
80
1.4
1.2
60
A B C
1.0
0.8
40
0.6
0.4
20
0.2
0
0
0 10 20 30 40 50
0 0.2 0.4 0.6 0.8 1.0
V - Reverse Voltage (V)
V - Forward Voltage (V) 18480
18478 R
F
Fig. 2 - Typical Forward Conduction Curve Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage
Rev. 2.1, 14-Oct-16 Document Number: 85680
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Forward Current (mA)
I - Forward Current (mA)
F
F
C - Typical Capacitance (pF)
I - Reverse Current (A)
D
R