SD101AW, SD101BW, SD101CW
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Vishay Semiconductors
Small Signal Schottky Diodes
FEATRUES
For general purpose applications
The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
The SD101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guardring
MECHANICAL DATA
AEC-Q101 qualified
Case: SOD-123
Base P/N-E3 - RoHS-compliant, commercial grade
Weight: approx. 10.3 mg
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Packaging codes/options:
Material categorization: For definitions of compliance
18/10K per 13" reel (8 mm tape), 10K/box
please see www.vishay.com/doc?99912
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
INTERNAL
PART ORDERING CODE TYPE MARKING REMARKS
CONSTRUCTION
SD101AW-E3-08 or SD101AW-E3-18
SD101AW Single diode SA
SD101AW-HE3-08 or SD101AW-HE3-18
SD101BW-E3-08 or SD101BW-E3-18
SD101BW Single diode SB Tape and reel
SD101BW-HE3-08 or SD101BW-HE3-18
SD101CW-E3-08 or SD101CW-E3-18
SD101CW Single diode SC
SD101CW-HE3-08 or SD101CW-HE3-18
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
SD101AW V 60 V
RRM
Repetitive peak reverse voltage SD101BW V 50 V
RRM
SD101CW V 40 V
RRM
(1)
Power dissipation (infinite heatsink) P 400 mW
tot
Forward continuous current I 30 mA
F
Maximum single cycle surge 10 s square wave I 2A
FSM
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
(1)
Thermal resistance junction to ambient air R 300 K/W
thJA
(1)
Junction temperature T 125 C
j
Storage temperature range T - 65 to + 150 C
stg
Operating ttemperature range T - 55 to + 125 C
op
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.8, 25-Feb-13 Document Number: 85679
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000SD101AW, SD101BW, SD101CW
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
SD101AW V 60 V
(BR)
Reverse breakdown voltage I = 10 A SD101BW V 50 V
R (BR)
SD101CW V 40 V
(BR)
V = 50 V SD101AW I 200 nA
R R
Leakage current V = 40 V SD101BW I 200 nA
R R
V = 30 V SD101CW I 200 nA
R R
SD101AW V 410 mV
F
I = 1 mA SD101BW V 400 mV
F F
SD101CW V 390 mV
F
Forward voltage drop
SD101AW V 1000 mV
F
I = 15 mA SD101BW V 950 mV
F F
SD101CW V 900 mV
F
SD101AW C 2pF
D
Diode capacitance V = 0 V, f = 1 MHz SD101BW C 2.1 pF
R D
SD101CW C 2.2 pF
D
Reverse recovery time I = I = 5 mA, recover to 0.1 I t 1ns
F R R rr
TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
100
10
A
B
125 C
C
10
100 C
1
75 C
1
50 C
0.1
0.1
25 C
0.01
0.01
0510 20 30 400
0 0.2 0.4 0.6 0.8 1.0
18479
V - Reverse Voltage (V)
R
V - Forward Voltage (V)
18477
F
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
100
2.0
A
T = 25 C
j
1.8
B
C
1.6
80
1.4
1.2
60
A B C
1.0
0.8
40
0.6
20 0.4
0.2
0 0
0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50
18478 V - Forward Voltage (V) V - Reverse Voltage (V)
18480 R
F
Fig. 2 - Typical Forward Conduction Curve Fig. 4 - Typical Capacitance Curve as a Function of Reverse
Voltage
Rev. 1.8, 25-Feb-13 Document Number: 85679
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Forward Current (mA)
I - Forward Current (mA)
F
F
C - Typical Capacitance (pF)
D I - Reverse Current (A)
R