SD103AW, SD103BW, SD103CW
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Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications
Other applications are click suppression,
efficient full wave bridges in telephone subsets,
and blocking diodes in rechargeable low voltage
battery systems
MECHANICAL DATA
The SD103 series is a metal-on-silicon Schottky barrier
Case: SOD-123
device which is protected by a PN junction guardring
Weight: approx. 10.3 mg
For general purpose applications
Cathode band color: black
AEC-Q101 qualified
Packaging codes/options:
Base P/N-E3 - RoHS-compliant, commercial grade
18/10K per 13" reel (8 mm tape), 10K/box
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
08/3K per 7" reel (8 mm tape), 15K/box
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
INTERNAL
PART ORDERING CODE TYPE MARKING REMARKS
CONSTRUCTION
SD103AW-E3-08 or SD103AW-E3-18
SD103AW Single diode S6
SD103AW-HE3-08 or SD103AW-HE3-18
SD103BW-E3-08 or SD103BW-E3-18
SD103BW Single diode S7 Tape and reel
SD103BW-HE3-08 or SD103BW-HE3-18
SD103CW-E3-08 or SD103CW-E3-18
SD103CW Single diode S8
SD103CW-HE3-08 or SD103CW-HE3-18
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
SD103AW V 40 V
RRM
Repetitive peak reverse voltage SD103BW V 30 V
RRM
SD103CW V 20 V
RRM
(1)
Forward continuous current I 350 mA
F
(1)
Power dissipation (infinite heat sink) P 400 mW
tot
Single cycle surge 10 s square wave I 2A
FSM
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
(1)
Thermal resistance junction to ambient air R 300 K/W
thJA
Junction temperature T 125 C
j
Operating temperature range T - 55 to + 125 C
op
Storage temperature range T - 55 to + 150 C
stg
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.6, 11-Mar-13 Document Number: 85681
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000SD103AW, SD103BW, SD103CW
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
V = 30 V SD103AW I 5A
R R
Leakage current V = 20 V SD103BW I 5A
R R
V = 10 V SD103CW I 5A
R R
I = 20 mA V 370 mV
F F
Forward voltage drop
I = 200 mA V 600 mV
F F
Diode capacitance V = 0 V, f = 1 MHz C 50 pF
R D
I = I = 50 mA to 200 mA,
F R
Reverse recovery time t 10 ns
rr
recover to 0.1 I
R
TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
1000
1000
T = 125 C
amb
100
100 C
100
75 C
10
10
50 C
1
1 25 C
0.1
0.1
0.01
0.01
0 5 10 15 20 25 30 35 40 45 50
0 0.2 0.4 0.6 0.8 1.0
20084
V - Reverse Voltage (V)
18488 V - Forward Voltage (V)
R
F
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
100
5
t = 300 ms
p
4
duty cycle = 2 %
3
10
2
1
0 1
010.5 1.0.5 0510 20 30 40 0
18489 18491
V - Forward Voltage (V)
V - Reverse Voltag e (V)
F R
Fig. 2 - Typical High Current Forward Conduction Curve Fig. 4 - Typical Capacitance vs. Reverse Voltage
Rev. 1.6, 11-Mar-13 Document Number: 85681
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Forward Current (mA)
I - Forward Current (A)
F F
C- Diode Capacitance (pF)
I - Reverse Current (A)
D R