333 3 SS2FN6 www.vishay.com Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier FEATURES Available eSMP Series Low profile package Ideal for automated placement Low forward voltage drop, low power losses Low leakage current Meets MSL level 1, per J-STD-020 , LF maximum peak of 260 C Top view Bottom view Wave and reflow solderable SMF (DO-219AB) AEC-Q101 qualified - Automotive ordering code: base P/NHM3 Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC 3D Models converters, and polarity protection in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 2.0 A F(AV) Case: SMF (DO-219AB)Molding compound meets V 60 V RRM UL 94 V-0 flammability rating I 50 A FSM Base P/N-M3 - halogen-free, RoHS-compliant V at I = 2.0 A (T = 125 C) 0.48 V F F A Base P/NHM3 - halogen-free, RoHS-compliant, and T max. (AC mode) 150 C J AEC-Q101 qualified T max. (DC forward current) 175 C J Terminals: matte tin plated leads, solderable per Package SMF (DO-219AB) J-STD-002 and JESD 22-B102 Circuit configuration Single M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS2FN6 UNIT Device marking code 2N6 Maximum repetitive peak reverse voltage V 60 V RRM (1) Maximum average forward rectified current (fig. 1) I 2.0 A F(AV) Non-repetitive peak forward surge current 8.3 ms single half I 50 A FSM sine-wave at T = 25 C J (init) Operating junction and storage temperature range T , T -55 to +150 C J STG Junction temperature in DC forward current without reverse bias T +175 C J Note (1) Free air, mounted on recommended copper pad area Revision: 03-Dec-2019 Document Number: 87523 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS2FN6 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 1.6 A 0.49 - F T = 25 C A I = 2.0 A 0.52 0.60 F (1) Instantaneous forward voltage V V F I = 1.6 A 0.45 - F T = 125 C A I = 2.0 A 0.48 0.57 F T = 25 C - 900 A A (2) Reverse current V = 60 V I R R T = 125 C 20 60 mA A Typical junction capacitance 4.0 V, 1 MHz C 100 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 c unless otherwise noted) A PARAMETER SYMBOL SS2FN6 UNIT (1)(2)(3) R 125 JA Typical thermal resistance C/W (2)(3) R 14 JM Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Device mounted on FR4 PCB, 2 oz. standard footprint (3) Thermal resistance R - junction to ambient R - junction to mount JA JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS2FN6-M3/H 0.015 H 3000 7 diameter plastic tape and reel SS2FN6-M3/I 0.015 I 10 000 13 diameter plastic tape and reel (1) SS2FN6HM3/H 0.015 H 3000 7 diameter plastic tape and reel (1) SS2FN6HM3/I 0.015 I 10 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 03-Dec-2019 Document Number: 87523 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000