333 3 SS2P2, SS2P3, SS2P4 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Schottky Barrier Rectifier FEATURES eSMP Series Available Very low profile - typical height of 1.0 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency Low thermal resistance Meets MSL level 1 per J-STD-020, LF maximum peak of 260 C SMP (DO-220AA) AEC-Q101 qualified available Material categorization: for definitions of compliance Cathode Anode please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection 3D Models applications. MECHANICAL DATA Case: SMP (DO-220AA) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2.0 A F(AV) V 20 V, 30 V, 40 V Base P/N-M3 - halogen-free, RoHS-compliant, and RRM commercial grade I 50 A FSM Base P/NHM3 - halogen-free, RoHS-compliant, and E 11.25 mJ AS automotive grade V 0.50 V F Terminals: matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package SMP (DO-220AA) M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix Circuit configuration Single meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS2P2 SS2P3 SS2P4 UNIT Device marking code 22 23 24 Maximum repetitive peak reverse voltage V 20 30 40 V RRM Maximum average forward rectified current (fig. 1) I 2.0 A F(AV) Peak forward surge current 10 ms single I 50 A FSM half sine-wave superimposed on rated load Non-repetitive avalanche energy at I = 1.5 A, L = 10 mH, T = 25 C E 11.25 mJ AS J AS Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 23-Apr-2020 Document Number: 88910 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS2P2, SS2P3, SS2P4 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2 A T = 25 C 0.50 0.55 F J (1) Maximum instantaneous forward voltage V V F I = 2 A T = 125 C 0.43 0.50 F J T = 25 C - 150 A J (2) Maximum reverse current at rated V voltage I R R T = 125 C 8 15 mA J Typical junction capacitance 4.0 V, 1 MHz C 110 pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS2P2SS2P3SS2P4UNIT (1) R 115 JA (1) Typical thermal resistance R 15 C/W JL (1) R 20 JC Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas R is measured JL at the terminal of cathode band. R is measured at the top center of the body JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS2P4-M3/84A 0.024 84A 3000 7 diameter plastic tape and reel SS2P4-M3/85A 0.024 85A 10 000 13 diameter plastic tape and reel (1) SS2P4HM3/84A 0.024 84A 3000 7 diameter plastic tape and reel (1) SS2P4HM3/85A 0.024 85A 10 000 13 diameter plastic tape and reel Note (1) Automotive grade Revision: 23-Apr-2020 Document Number: 88910 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000