333 3 TA6F6.8A thru TA6F51A www.vishay.com Vishay General Semiconductor Surface-Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES eSMP Series Very low profile - typical height of 0.95 mm Junction passivation optimized design passivated anisotropic rectifier technology T = 185 C capability suitable for high J reliability and automotive requirement Bottom View Top View Ideal for automated placement Unidirectional only SlimSMA (DO-221AC) Excellent clamping capability Peak pulse power: 600 W (10/1000 s) Cathode Anode AEC-Q101 qualified ESD capability: IEC 61000-4-2 level 4 LINKS TO ADDITIONAL RESOURCES - 15 kV (air) - 8 kV (contact) 3D Models Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 V 6.8 V to 51 V BR V 5.8 V to 43.6 V TYPICAL APPLICATIONS WM P (10 x 1000 s) 600 W PPM Use in sensitive electronics protection against voltage P at T = 65 C 6 W transients induced by inductive load switching and lightin g D M on ICs, MOSFET, signal lines of sensor units for consumer, T max. 185 C J computer, industrial, and telecommunication. Polarity Unidirectional Package SlimSMA (DO-221AC) MECHANICAL DATA Case: SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating Base P/NHM3 X - halogen-free, RoHS-compliant and AEC-Q101 qualified ( X denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLVALUE UNIT (1) Peak pulse power dissipation with a 10/1000 s waveform P 600 W PPM (1) Peak pulse current with a 10/1000 s waveform I See next table A PPM (2) Power dissipation on infinite heat sink, T = 65 C P 6 M D W (3) Power dissipation, T = 25 C P 1.1 M D Operating junction and storage temperature range T , T -65 to +185 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2. A (2) Power dissipation mounted on infinite heat sink (3) Power dissipation mounted on minimum recommended pad layout Revision: 16-Apr-2020 Document Number: 89939 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D TA6F6.8A thru TA6F51A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN T = 150 C J MAXIMUM MAXIMUM MAXIMUM TYPICAL VOLTAGE MAXIMUM TEST STAND-OFF REVERSE PEAK PULSE CLAMPING TEMP. (1) DEVICE V AT I REVERSE BR T DEVICE CURRENT VOLTAGE LEAKAGE SURGE VOLTAGE COEFFICIENT MARKING (V) LEAKAGE AT (2) TYPE I V AT V CURRENT AT I OF V T WM WM PPM BR CODE V WM (mA) (V) I I V T R PPM C I R MIN. NOM. MAX. (A) (A) (V) (%/C) (A) TA6F6.8A AEP 6.45 6.80 7.14 10 5.80 500 1000 57.1 10.5 0.047 TA6F7.5A AGP 7.13 7.50 7.88 10 6.40 250 500 53.1 11.3 0.052 TA6F8.2A AKP 7.79 8.20 8.61 10 7.02 100 200 49.6 12.1 0.056 TA6F9.1A AMP 8.65 9.10 9.55 1.0 7.78 25 50 44.8 13.4 0.060 TA6F10A APP 9.5 10.0 10.5 1.0 8.55 5.0 20 41.4 14.5 0.064 TA6F11A ARP 10.5 11.0 11.6 1.0 9.40 2.0 5.0 38.5 15.6 0.067 TA6F12A ATP 11.4 12.0 12.6 1.0 10.2 2.0 5.0 35.9 16.7 0.070 TA6F13A AVP 12.4 13.0 13.7 1.0 11.1 2.0 5.0 33.0 18.2 0.072 TA6F15A AXP 14.3 15.0 15.8 1.0 12.8 1.0 5.0 28.3 21.2 0.076 TA6F16A AZP 15.2 16.0 16.8 1.0 13.6 1.0 5.0 26.7 22.5 0.078 TA6F18A BEP 17.1 18.0 18.9 1.0 15.3 1.0 5.0 23.5 25.5 0.080 TA6F20A BGP 19.0 20.0 21.0 1.0 17.1 1.0 5.0 21.7 27.7 0.082 TA6F22A BKP 20.9 22.0 23.1 1.0 18.8 1.0 5.0 19.6 30.6 0.084 TA6F24A BMP 22.8 24.0 25.2 1.0 20.5 1.0 5.0 18.1 33.2 0.085 TA6F27A BPP 25.7 27.0 28.4 1.0 23.1 1.0 5.0 16.0 37.5 0.087 TA6F30A BRP 28.5 30.0 31.5 1.0 25.6 1.0 5.0 14.5 41.4 0.088 TA6F33A BTP 31.4 33.0 34.7 1.0 28.2 1.0 5.0 13.1 45.7 0.089 TA6F36A BVP 34.2 36.0 37.8 1.0 30.8 1.0 5.0 12.0 49.9 0.090 TA6F39A BXP 37.1 39.0 41.0 1.0 33.3 1.0 5.0 11.1 53.9 0.091 TA6F43A BZP 40.9 43.0 45.2 1.0 36.8 1.0 10.0 10.1 59.3 0.092 TA6F47A CEP 44.7 47.0 49.4 1.0 40.2 1.0 10.0 9.3 64.8 0.092 TA6F51A CGP 48.5 51.0 53.6 1.0 43.6 1.0 10.0 8.6 70.1 0.093 Notes (1) Pulse test: t 50 ms p (2) To calculate V vs. junction temperature, use the following formula: V at T = V at 25 C x (1 + T x (T - 25)) BR BR J BR J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Typical thermal resistance, junction to ambient R 145 C/W JA Typical thermal resistance, junction to mount R (2) 20 C/W JM Notes (1) Mounted on minimum recommended pad layout (2) Mounted on infinite heat sink IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS (T = 25 C unless otherwise noted) A STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE Human body model (contact mode) > 8 kV IEC 61000-4-2 C = 150 pF, R = 330 V 4 C Human body model (air discharge mode) > 15 kV ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE (1) TA6F6.8AHM3 A/H 0.032 H 3500 7 diameter plastic tape and reel (1) TA6F6.8AHM3 A/I 0.032 I 14 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 16-Apr-2020 Document Number: 89939 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000