X-On Electronics has gained recognition as a prominent supplier of TA6F30AHM3/6A ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. TA6F30AHM3/6A ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

TA6F30AHM3/6A Vishay

TA6F30AHM3/6A electronic component of Vishay
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Part No.TA6F30AHM3/6A
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 600watts 30V 5% Uni
Datasheet: TA6F30AHM3/6A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0108 ea
Line Total: USD 0.01 
Availability - 3
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0108

   
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Pd - Power Dissipation
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We are delighted to provide the TA6F30AHM3/6A from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TA6F30AHM3/6A and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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TA6F6.8A thru TA6F51A www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES eSMP Series Very low profile - typical height of 0.95 mm Junction passivation optimized design passivated anisotropic rectifier technology T = 185 C capability suitable for high J reliability and automotive requirement Bottom View Top View Ideal for automated placement Uni-directional only SlimSMA (DO-221AC) Excellent clamping capability Peak pulse power: 600 W (10/1000 s) Cathode Anode AEC-Q101 qualified ESD capability: IEC 61000-4-2 level 4 - 15 kV (air) click logo to get started DESIGN SUPPORT TOOLS - 8 kV (contact) Meets MSL level 1, per J-STD-020, LF maximum peak Models of 260 C Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS V 6.8 V to 51 V BR Use in sensitive electronics protection against voltage V 5.8 V to 43.6 V WM transients induced by inductive load switching and lighting P (10 x 1000 s) 600 W on ICs, MOSFET, signal lines of sensor units for consumer, PPM computer, industrial, and telecommunication. P at T = 65 C 6 W D M T max. 185 C J MECHANICAL DATA Polarity Uni-directional Case: SlimSMA (DO-221AC) Package SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating Base P/NHM3 X - halogen-free, RoHS-compliant and AEC-Q101 qualified ( X denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLVALUE UNIT (1) Peak pulse power dissipation with a 10/1000 s waveform P 600 W PPM (1) Peak pulse current with a 10/1000 s waveform I See next table A PPM (2) Power dissipation on infinite heat sink, T = 65 C P 6 M D W (3) Power dissipation, T = 25 C P 1.1 M D Operating junction and storage temperature range T , T -65 to +185 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2. A (2) Power dissipation mounted on infinite heat sink (3) Power dissipation mounted on minimum recommended pad layout Revision: 04-May-2018 Document Number: 89939 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TA6F6.8A thru TA6F51A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN T = 150 C J MAXIMUM MAXIMUM MAXIMUM VOLTAGE MAXIMUM TEST STAND-OFF REVERSE PEAK PULSE CLAMPING (1) DEVICE V AT I REVERSE BR T DEVICE CURRENT VOLTAGE LEAKAGE SURGE VOLTAGE MARKING (V) LEAKAGE AT TYPE I V AT V CURRENT AT I T WM WM PPM CODE V WM (mA) (V) I I V R PPM C I R MIN. MAX. (A) (A) (V) (A) TA6F6.8A AEP 6.45 7.14 10 5.80 500 1000 57.1 10.5 TA6F7.5A AGP 7.13 7.88 10 6.40 250 500 53.1 11.3 TA6F8.2A AKP 7.79 8.61 10 7.02 100 200 49.6 12.1 TA6F9.1A AMP 8.65 9.55 1.0 7.78 25 50 44.8 13.4 TA6F10A APP 9.5 10.5 1.0 8.55 5.0 20 41.4 14.5 TA6F11A ARP 10.5 11.6 1.0 9.40 2.0 5.0 38.5 15.6 TA6F12A ATP 11.4 12.6 1.0 10.2 2.0 5.0 35.9 16.7 TA6F13A AVP 12.4 13.7 1.0 11.1 2.0 5.0 33.0 18.2 TA6F15A AXP 14.3 15.8 1.0 12.8 1.0 5.0 28.3 21.2 TA6F16A AZP 15.2 16.8 1.0 13.6 1.0 5.0 26.7 22.5 TA6F18A BEP 17.1 18.9 1.0 15.3 1.0 5.0 23.5 25.5 TA6F20A BGP 19.0 21.0 1.0 17.1 1.0 5.0 21.7 27.7 TA6F22A BKP 20.9 23.1 1.0 18.8 1.0 5.0 19.6 30.6 TA6F24A BMP 22.8 25.2 1.0 20.5 1.0 5.0 18.1 33.2 TA6F27A BPP 25.7 28.4 1.0 23.1 1.0 5.0 16.0 37.5 TA6F30A BRP 28.5 31.5 1.0 25.6 1.0 5.0 14.5 41.4 TA6F33A BTP 31.4 34.7 1.0 28.2 1.0 5.0 13.1 45.7 TA6F36A BVP 34.2 37.8 1.0 30.8 1.0 5.0 12.0 49.9 TA6F39A BXP 37.1 41.0 1.0 33.3 1.0 5.0 11.1 53.9 TA6F43A BZP 40.9 45.2 1.0 36.8 1.0 10.0 10.1 59.3 TA6F47A CEP 44.7 49.4 1.0 40.2 1.0 10.0 9.3 64.8 TA6F51A CGP 48.5 53.6 1.0 43.6 1.0 10.0 8.6 70.1 Note (1) Pulse test: t 50 ms p THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1) Typical thermal resistance, junction to ambient R 145 C/W JA Typical thermal resistance, junction to mount R (2) 20 C/W JM Notes (1) Mounted on minimum recommended pad layout (2) Mounted on infinite heat sink IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS (T = 25 C unless otherwise noted) A STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE Human body model (contact mode) > 8 kV IEC 61000-4-2 C = 150 pF, R = 330 V 4 C Human body model (air discharge mode) > 15 kV ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE (1) TA6F6.8AHM3 A/H 0.032 H 3500 7 diameter plastic tape and reel (1) TA6F6.8AHM3 A/I 0.032 I 14 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 04-May-2018 Document Number: 89939 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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