TCET2100, TCET4100 Vishay Semiconductors Optocoupler, Phototransistor Output, (Dual, Quad Channel) FEATURES Dual Channel Extra low coupling capacity - typical 0.2 pF High common mode rejection Low temperature coefficient of CTR Rated impulse voltage (transient overvoltage) V = 10 kV peak IOTM Creepage current resistance according to Quad Channel VDE 0303/IEC 60112 comparative tracking index: CTI 175 Thickness through insulation 0.4 mm E C Compliant to RoHS directive 2002/95/EC and in C A 1 accordance to WEEE 2002/96/EC i179012-1 17198-1 AGENCY APPROVALS V DE UL1577, file no. E52744 system code H, double protection C CSA 22.2 bulletin 5A, double protection DIN EN 60747-5-5 (VDE 0884) DESCRIPTION FIMKO The TCET2100/TCET4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode, available in 8 pin (dual channel) and 16 pin (quad channel) package. ORDERING INFORMATION DIP T C E T 100 PART NUMBER 7.62 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL, VDE 50 to 600 DIP-8, dual channel TCET2100 DIP-16, quad channel TCET4100 Document Number: 83727 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 1.5, 07-Oct-10 1 8 Pin 16 Pin TCET2100, TCET4100 Optocoupler, Phototransistor Output, Vishay Semiconductors (Dual, Quad Channel) (1) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 1.5 A p FSM Power dissipation P 100 mW diss Junction temperature T 125 C j OUTPUT Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation P 150 mW diss Junction temperature T 125 C j COUPLER Isolation test voltage (RMS) t = 1 s V 5300 V ISO RMS Isolation voltage V 890 V IORM P Total power dissipation P 250 mW tot Operating ambient temperature range T - 55 to + 100 C amb Storage temperature range T - 55 to + 150 C stg (2) Soldering temperature 2 mm from case, t 10 s T 260 C sld Notes (1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V 1.25 1.6 V F F Junction capacitance V = 0 V, f = 1 MHz C 50 pF R j OUTPUT Collector emitter voltage I = 1 mA V 70 V C CEO Emitter collector voltage I = 100 A V7V E ECO Collector emitter cut-off current V = 20 V, I = 0, E = 0 I 10 100 nA CE F CEO COUPLER Collector emitter saturation voltage I = 10 mA, I = 1 mA V 0.3 V F C CEsat V = 5 V, I = 10 mA, CE F Cut-off frequency f 110 kHz c R = 100 L Coupling capacitance f = 1 MHz C 0.3 pF k Note Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I /I V = 5 V, I = 5 mA CTR 50 600 % C F CE F www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 83727 2 Rev. 1.5, 07-Oct-10