TCST5250 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output FEATURES C A Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 14.3 x 6 x 9.5 Gap (in mm): 2.7 C E Aperture (in mm): 0.5 Typical output current under test: I = 1.5 mA C 21834 Daylight blocking filter CE 19208 1 Emitter wavelength: 950 nm Lead (Pb)-free soldering released DESCRIPTION Compliant to RoHS directive 2002/95/EC and in The TCST5250 is a transmissive sensor that includes an accordance to WEEE 2002/96/EC infrared emitter and a phototransistor, located face-to-face on the optical axes in a leaded package which blocks visible APPLICATIONS light. Optical switch Shaft encoder PRODUCT SUMMARY TYPICAL OUTPUT DAYLIGHT (1) PART NUMBER GAP WIDTH APERTURE WIDTH CURRENT UNDER TEST BLOCKING FILTER (mm) (mm) (mA) INTEGRATED TCST5250 2.7 0.5 1.5 Yes Note (1) Conditions like in table basic characteristics/coupler ORDERING INFORMATION (1) ORDERING CODE PACKAGING VOLUME REMARKS TCST5250 Tube MOQ: 4860 pcs, 30 pcs/tube - Note (1) MOQ: minimum order quantity (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total power dissipation T 25 C P 250 mW amb tot Ambient temperature range T - 25 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Distance to package 1.6 mm, t 5 s T 260 C sd INPUT (EMITTER) Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 3A p FSM Power dissipation T 25 C P 100 mW amb V Junction temperature T 100 C j OUTPUT (DETECTOR) Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 100 mA C Document Number: 83787 For technical questions, contact: sensorstechsupport vishay.com www.vishay.com Rev. 1.5, 17-Aug-09 1 TCST5250 Transmissive Optical Sensor with Vishay Semiconductors Phototransistor Output (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT (DETECTOR) Power dissipation T 25 C P 150 mW amb V Junction temperature T 100 C j Note (1) T = 25 C, unless otherwise specified amb ABSOLUTE MAXIMUM RATINGS 400 300 Coupled device 200 Phototransistor IR-diode 100 0 0 30 60 90 120 150 T - Ambient Temperature (C) 95 11088 amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature (1) BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT COUPLER Collector current V = 10 V, I = 20 mA I 0.5 1.5 15 mA CE F C Collector emitter saturation I = 20 mA, I = 0.2 mA V 0.4 V F C CEsat voltage INPUT (EMITTER) Forward voltage I = 60 mA V 1.25 1.5 V F F Junction capacitance V = 0 V, f = 1 MHz C 50 pF R j OUTPUT (DETECTOR) Collector emitter voltage I = 1 mA V 70 V C CEO Emitter collector voltage I = 10 A V7V E ECO Collector dark current V = 25 V, I = 0 A, E = 0 lx I 10 100 nA CE F CEO SWITCHING CHARACTERISTICS I = 1 mA, V = 5 V, C CE Turn-on time t 15 s on R = 100 (see figure 2) L I = 1 mA, V = 5 V, C CE Turn-off time t 10 s off R = 100 (see figure 2) L Note (1) T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: sensorstechsupport vishay.com Document Number: 83787 2 Rev. 1.5, 17-Aug-09 P - Power Dissipation (mW)