X-On Electronics has gained recognition as a prominent supplier of TSTA7100 Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. TSTA7100 Infrared Emitters - High Power are a product manufactured by Vishay. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

TSTA7100 Vishay

TSTA7100 electronic component of Vishay
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Part No.TSTA7100
Manufacturer: Vishay
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power 875nm, TO-18 50mW/sr, +/-5deg.
Datasheet: TSTA7100 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.04 ea
Line Total: USD 2.04 
Availability - 871
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
87300
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 102
Multiples : 1
102 : USD 1.4633

871
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 2.04
10 : USD 1.7564
30 : USD 1.5109
100 : USD 1.3288
500 : USD 1.2482
1000 : USD 1.2117

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
If - Forward Current
Power Rating
Package / Case
Maximum Operating Temperature
Packaging
Illumination Color
Brand
Lens Shape
Viewing Angle
Maximum Forward Current
Factory Pack Quantity :
Height
Width
Cnhts
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TSTA7100 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSTA7100 and other electronic components in the Infrared Emitters - High Power category and beyond.

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TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES Package type: leaded Package form: TO-18 Dimensions (in mm): 4.7 Peak wavelength: = 875 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 5 94 8483 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Lead (Pb)-free component in accordance with DESCRIPTION RoHS 2002/95/EC and WEEE 2002/96/EC TSTA7100 is an infrared, 875 nm emitting diode in GaAlAs technology in a hermetically sealed TO-18 package with APPLICATIONS lens. Radiation source near infrared range PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r TSTA7100 50 5 875 600 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSTA7100 Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t 100 s I 200 mA p p FM Surge forward current t 100 s I 2.5 A p FSM P 180 mW V Power dissipation T 25 C P 500 mW case V Junction temperature T 100 C j Storage temperature range T - 55 to + 100 C stg Thermal resistance junction/ambient leads not soldered R 450 K/W thJA Thermal resistance junction/case leads not soldered R 150 K/W thJC Note T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: emittertechsupport vishay.com Document Number: 81044 248 Rev. 1.7, 04-Sep-08TSTA7100 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs 600 125 R thJC 500 100 R thJC 400 75 300 50 200 R thJA R thJA 25 100 0 0 0 25 50 75 100 125 0 20 40 60 80 100 12790 T - Ambient Temperature (C) 94 7971 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA, t 20 ms V 1.4 1.8 V F p F Breakdown voltage I = 100 A V5V R (BR) Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 20 pF R j Radiant intensity I = 100 mA, t 20 ms I 20 50 100 mW/sr F p e Radiant power I = 100 mA, t 20 ms 10 mW F p e Temperature coefficient of I = 100 mA TK - 0.7 %/K e F e Angle of half intensity 5 deg Peak wavelength I = 100 mA 875 nm F p Spectral bandwidth I = 100 mA 80 nm F I = 100 mA t 600 ns F r Rise time I = 1.5 A, t /T = 0.01, t 10 s t 300 ns F p p r Virtual source diameter d 1.5 mm Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 4 1 10 10 t = 100 s p I = 2.5 A (single pause) FSM t /T= 0.001 p 3 10 t /T=0.01 p 0 10 0.05 0.1 2 10 0.2 0.5 -1 1 10 10 0 1 2 3 4 -2 -1 0 1 2 10 10 10 10 10 94 8003 t - Pulse Duration (ms) V - Forward Voltage (V) p 94 8005 F Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage Document Number: 81044 For technical questions, contact: emittertechsupport vishay.com www.vishay.com Rev. 1.7, 04-Sep-08 249 P - Power Dissipation (mW) I - Forward Current (A) V F I - Forward Current (mA) I - Forward Current (mA) F F

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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