End of Life May-2021 - Alternative Device: VSLY3943 TSUS4400 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 3 Peak wavelength: = 950 nm p High reliability Angle of half intensity: = 18 Low forward voltage Suitable for high pulse current operation 94 8636 Good spectral matching with Si photodetectors Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS TSUS4400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue tinted plastic package. Infrared remote control and free air transmission systems with low forward voltage and small package requirements Emitter in transmissive sensors Emitter in reflective sensors PRODUCT SUMMARY COMPONENT I (mW/sr) () (nm) t (ns) e p r TSUS4400 15 18 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSUS4400 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 2A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T -40 to + 85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction to ambient J-STD-051, leads 7 mm, soldered on PCB R 300 K/W thJA Rev. 1.9, 29-Jan-2021 Document Number: 81054 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life May-2021 - Alternative Device: VSLY3943 TSUS4400 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 R = 300 K/W thJA 100 60 80 R = 300 K/W thJA 60 40 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21316 T - Ambient Temperature (C) 21315 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V -1.3 1.7 V F p F Forward voltage I = 1.5 A, t = 100 s V -2.2 - V F p F Temperature coefficient of V I = 100 mA TK --1.3- mV/K F F VF Reverse current V = 5 V I - 100 A R R Breakdown voltage I = 100 A V 540 - A R (BR) Junction capacitance V = 0 V, f = 1 MHz, E = 0 C -30 - pF R j I = 100 mA, t = 20 ms I 715 35 mW/sr F p e Radiant intensity I = 1.5 A, t = 100 s I - 140 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms -20 - mW F p e Temperature coefficient of I = 20 mA TK - -0.8 - %/K e F e Angle of half intensity - 18 - Peak wavelength I = 100 mA - 950 - nm F p Spectral bandwidth I = 100 mA -50 - nm F Temperature coefficient of I = 100 mA TK -0.2 - nm/K p F p I = 100 mA t - 800 - ns F r Rise time I = 1.5 A t - 400 - ns F r I = 100 mA t - 800 - ns F f Fall time I = 1.5 A t - 400 - ns F f Virtual source diameter d - 2.1 - mm Rev. 1.9, 29-Jan-2021 Document Number: 81054 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F