X-On Electronics has gained recognition as a prominent supplier of TSUS6402 Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. TSUS6402 Infrared Emitters - High Power are a product manufactured by Vishay. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

TSUS6402 Vishay

TSUS6402 electronic component of Vishay
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Part No.TSUS6402
Manufacturer: Vishay
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power 950nm,T-1.75 30mW/sr,+/-15deg.
Datasheet: TSUS6402 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.1246
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.9228
10 : USD 0.7636
100 : USD 0.2634
1000 : USD 0.2021
4000 : USD 0.1733
N/A

Obsolete
0
MOQ : 2
Multiples : 1
2 : USD 0.4817
10 : USD 0.2459
50 : USD 0.1531
125 : USD 0.1473
250 : USD 0.134
N/A

Obsolete
0
MOQ : 54
Multiples : 54
54 : USD 0.1246
N/A

Obsolete
   
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We are delighted to provide the TSUS6402 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSUS6402 and other electronic components in the Infrared Emitters - High Power category and beyond.

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End of Life May-2021 - Alternative Device: TSAL6400 TSUS6402 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Peak wavelength: = 950 nm p High reliability Angle of half intensity: = 22 Low forward voltage Suitable for high pulse current operation 94 8390 Good spectral matching with Si photodetectors Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS DESCRIPTION Infrared remote control and free air transmission systems TSUS6402 is an infrared, 950 nm emitting diode in GaAs with low forward voltage and small package requirements technology molded in a blue-gray tinted plastic package. Emitter in transmissive sensors Emitter in reflective sensors PRODUCT SUMMARY COMPONENT I (mW/sr) () (nm) t (ns) e p r TSUS6402 30 22 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSUS6402 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 150 mA F Peak forward current t /T = 0.5, t = 100 s I 300 mA p p FM Surge forward current t = 100 s I 2.5 A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 230 K/W thJA Rev. 1.1, 29-Jan-2021 Document Number: 84318 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life May-2021 - Alternative Device: TSAL6400 TSUS6402 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 100 60 80 R = 230 K/W thJA R = 230 K/W thJA 60 40 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21313 amb 21314 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA, t = 20 ms V 1.3 1.7 V F p F Temperature coefficient of V I = 100 mA TK - 1.3 mV/K F F VF Reverse current V = 5 V I 100 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 30 pF R j I = 100 mA, t = 20 ms I 15 30 50 mW/sr F p e Radiant intensity I = 1.5 A, t = 100 s I 120 190 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 15 mW F p e Temperature coefficient of I = 20 mA TK - 0.8 %/K e F e Angle of half intensity 22 Peak wavelength I = 100 mA 950 nm F p Spectral bandwidth I = 100 mA 50 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p I = 100 mA t 800 ns F r Rise time I = 1.5 A t 400 ns F r I = 100 mA t 800 ns F f Fall time I = 1.5 A t 400 ns F f Virtual source diameter d 2.9 mm Forward voltage I = 1.5 A, t = 100 s V 2.2 2.7 V F p F Rev. 1.1, 29-Jan-2021 Document Number: 84318 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
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GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
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SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
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TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
VISHAY/BC COMPONENTS
Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
VITRAMON/VISHAY
VITROMON
VSC
VSO
VSS
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