X-On Electronics has gained recognition as a prominent supplier of TSHG6400 Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. TSHG6400 Infrared Emitters - High Power are a product manufactured by Vishay. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

TSHG6400 Vishay

Hot TSHG6400 electronic component of Vishay
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Part No.TSHG6400
Manufacturer: Vishay
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power 850nm,T-1.75 70mW/sr,+/-22deg.
Datasheet: TSHG6400 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.714 ea
Line Total: USD 0.71 
Availability - 3866
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9401
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.9782
10 : USD 1.2543
100 : USD 0.9288
500 : USD 0.8531
1000 : USD 0.7099

3866
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.714
10 : USD 0.5194
50 : USD 0.4606
63 : USD 0.2772
174 : USD 0.2618

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Illumination Color
Brand
Forward Current
Forward Voltage
Lens Shape
Viewing Angle
Fall Time
Maximum Forward Current
Rise Time
Factory Pack Quantity :
Height
Width
Cnhts
Hts Code
Lens Dimensions
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TSHG6400 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSHG6400 and other electronic components in the Infrared Emitters - High Power category and beyond.

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TSHG6400 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 22 Low forward voltage 94 8389 Suitable for high pulse current operation High modulation bandwidth: f = 18 MHz c Good spectral matching with CMOS cameras Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Note TSHG6400 is an infrared, 850 nm emitting diode in GaAlAs ** Please see document Vishay Material Category Policy: double hetero (DH) technology with high radiant power and www.vishay.com/doc 99902 high speed, molded in a clear, untinted plastic package. APPLICATIONS Infrared radiation source for operation with CMOS cameras (illumination). High speed IR data transmission. PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r TSHG6400 70 22 850 20 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHG6400 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 180 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd J-STD-051, leads 7 mm soldered Thermal resistance junction/ambient R 230 K/W thJA on PCB Rev. 1.2, 23-Aug-11 Document Number: 84636 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSHG6400 www.vishay.com Vishay Semiconductors 200 120 180 100 160 140 80 120 R = 230 K/W thJA R = 230 K/W thJA 100 60 80 40 60 40 20 20 0 0 0 1020 3040506070 8090 100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21142 21143 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.5 1.8 V F p F Forward voltage I = 1 A, t = 100 s V 2.3 V F p F Temperature coefficient of V I = 1 mA TK - 1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 100 mA, t = 20 ms I 45 70 135 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 700 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 50 mW F p e Temperature coefficient of I = 100 mA TK - 0.35 %/K e F e Angle of half intensity 22 deg Peak wavelength I = 100 mA 850 nm F p Spectral bandwidth I = 100 mA 40 nm F Temperature coefficient of I = 100 mA TK 0.25 nm/K p F p Rise time I = 100 mA t 20 ns F r Fall time I = 100 mA t 13 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 18 MHz DC AC c Virtual source diameter d 3.7 mm Rev. 1.2, 23-Aug-11 Document Number: 84636 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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