X-On Electronics has gained recognition as a prominent supplier of TSHF6210 Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. TSHF6210 Infrared Emitters - High Power are a product manufactured by Vishay. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

TSHF6210 Vishay

TSHF6210 electronic component of Vishay
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Part No.TSHF6210
Manufacturer: Vishay
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power 890nm, T-1.75 180mW/sr, +/-10deg.
Datasheet: TSHF6210 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0333 ea
Line Total: USD 1.03 
Availability - 50697
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
50697
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0333
10 : USD 0.6294
100 : USD 0.3355
1000 : USD 0.3087
4000 : USD 0.2698
8000 : USD 0.259

   
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RoHS - XON
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Radiant Intensity
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We are delighted to provide the TSHF6210 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSHF6210 and other electronic components in the Infrared Emitters - High Power category and beyond.

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TSHF6210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Peak wavelength: = 890 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 10 Low forward voltage 94 8389 Suitable for high pulse current operation High modulation bandwidth: f = 12 MHz c Good spectral matching with Si photodetectors Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Note ** Please see document Vishay Material Category Policy: TSHF6210 is an infrared, 890 nm emitting diode in GaAlAs www.vishay.com/doc 99902 double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. APPLICATIONS Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz) Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r TSHF6210 180 10 890 30 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHF6210 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1.5 A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB R 230 K/W thJA Rev. 1.3, 23-Aug-11 Document Number: 81734 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSHF6210 www.vishay.com Vishay Semiconductors 120 180 160 100 140 120 80 R = 230 K/W thJA 100 60 80 R = 230 K/W thJA 40 60 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 21212 T - Ambient Temperature (C) T - Ambient Temperature (C) 21211 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.4 1.6 V F p F Forward voltage I = 1 A, t = 100 s V 2.3 V F p F Temperature coefficient of V I = 1 mA TK - 1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 100 mA, t = 20 ms I 120 180 360 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 1800 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 50 mW F p e Temperature coefficient of I = 100 mA TK - 0.35 %/K e F e Angle of half intensity 10 deg Peak wavelength I = 100 mA 890 nm F p Spectral bandwidth I = 100 mA 40 nm F Temperature coefficient of I = 100 mA TK 0.25 nm/K p F p Rise time I = 100 mA t 30 ns F r Fall time I = 100 mA t 30 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 12 MHz DC AC c Virtual source diameter d3.7 mm Rev. 1.3, 23-Aug-11 Document Number: 81734 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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