TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Peak wavelength: = 940 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 17 94 8389 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Material categorization: For definitions of compliance DESCRIPTION please see www.vishay.com/doc 99912 TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs APPLICATIONS multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic Infrared remote control units with high power package. requirements Free air transmission systems Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r TSAL6200 72 17 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSAL6200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1.5 A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB R 230 K/W thJA Rev. 2.4, 13-Mar-14 Document Number: 81010 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSAL6200 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 R = 230 K/W thJA 100 60 80 R = 230 K/W thJA 60 40 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 21212 T - Ambient Temperature (C) T - Ambient Temperature (C) 21211 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.35 1.6 V F p F Forward voltage I = 1 A, t = 100 s V 2.2 3 V F p F Temperature coefficient of V I = 1 mA TK -1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 40 pF R j I = 100 mA, t = 20 ms I 40 72 200 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 340 600 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 40 mW F p e Temperature coefficient of I = 20 mA TK -0.6 %/K e F e Angle of half intensity 17 deg Peak wavelength I = 100 mA 940 nm F p Spectral bandwidth I = 100 mA 30 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p Rise time I = 100 mA t 15 ns F r Fall time I = 100 mA t 15 ns F f Rev. 2.4, 13-Mar-14 Document Number: 81010 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F