TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs tech- nology these emitters achieve more than 100 % radi- ant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the 94 8389 standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters. Features Applications Extra high radiant power and radiant Infrared remote control units with high power intensity requirements High reliability Free air transmission systems e2 Low forward voltage Infrared source for optical counters and card readers Suitable for high pulse current operation IR source for smoke detectors Standard T-1 ( 5 mm) package Angle of half intensity = 17 Peak wavelength = 940 nm p Good spectral matching to Si photodetectors Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1.5 A p FSM Power dissipation P 210 mW V Junction temperature T 100 C j Operating temperature range T - 55 to + 100 C amb Storage temperature range T - 55 to + 100 C stg Soldering temperature t 5 sec, 2 mm from case T 260 C sd Thermal resistance junction/ R 350 K/W thJA ambient Document Number 81012 www.vishay.com Rev. 1.6, 28-Nov-06 1TSAL7200 Vishay Semiconductors Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I = 100 mA, t = 20 ms V 1.35 1.6 V F p F I = 1 A, t = 100 s V 2.6 3 V F p F Temp. coefficient of V I = 100 mA TK - 1.3 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 25 pF R j Optical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit Radiant intensity I = 100 mA, t = 20 ms I 40 60 200 mW/sr F p e I = 1.0 A, t = 100 s I 340 500 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 35 mW F p e Temp. coefficient of I = 20 mA TK - 0.6 %/K e F e Angle of half intensity 17 deg Peak wavelength I = 100 mA 940 nm F p Spectral bandwidth I = 100 mA 50 nm F Temp. coefficient of I = 100 mA TK 0.2 nm/K p F p Rise time I = 100 mA t 800 ns F r Fall time I = 100 mA t 800 ns F f Virtual source diameter method: 63 % encircled energy 2.4 mm Typical Characteristics T = 25 C, unless otherwise specified amb 250 250 200 200 150 150 R thJA 100 100 R thJA 50 50 0 0 0 20 40 60 80 100 100 02 04 06 0 80 94 7957 T - Ambient Temperature (C) 96 11986 T - Ambient Temperature (C) amb amb Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.com Document Number 81012 2 Rev. 1.6, 28-Nov-06 P - Power Dissipation (MW) V I- Forward Current (mA) F