TSAL6400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Peak wavelength: = 940 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 25 Low forward voltage 94 8389 Suitable for high pulse current operation Good spectral matching with Si photodetectors Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS TSAL6400 is an infrared, 940 nm emitting diode in GaAlAs Infrared remote control units with high power multi quantum well (MQW) technology with high radiant requirements power and high speed Free air transmission systems molded in a blue-gray plastic package. Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r TSAL6400 50 25 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSAL6400 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1.5 A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB R 230 K/W thJA Rev. 2.0, 13-Mar-14 Document Number: 81011 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSAL6400 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 R = 230 K/W thJA 100 60 80 R = 230 K/W thJA 60 40 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 21212 T - Ambient Temperature (C) T - Ambient Temperature (C) 21211 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.35 1.6 V F p F Forward voltage I = 1 A, t = 100 s V 2.2 3 V F p F Temperature coefficient of V I = 1 mA TK -1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 40 pF R j I = 100 mA, t = 20 ms I 25 50 125 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 220 420 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 40 mW F p e Temperature coefficient of I = 20 mA TK -0.6 %/K e F e Angle of half intensity 25 deg Peak wavelength I = 100 mA 940 nm F p Spectral bandwidth I = 100 mA 30 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p Rise time I = 100 mA t 15 ns F r Fall time I = 100 mA t 15 ns F f Rev. 2.0, 13-Mar-14 Document Number: 81011 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F