TSKS5400 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES Package type: leaded Package form: side view lens Dimensions (L x W x H in mm): 5 x 2.65 x 5 Peak wavelength: = 950 nm p High reliability High radiant power 14354-1 High radiant intensity Angle of half intensity: = 30 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors DESCRIPTION Package matched with detector TEKS5400 The TSKS5400-FSZ is an infrared, 950 nm emitting diode in Material categorization: For definitions of compliance GaAs technology with high radiant power, molded in a clear please see www.vishay.com/doc 99912 plastic package. APPLICATIONS Photointerrupters Transmissive sensors, gap sensors Reflective sensors PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r TSKS5400-FSZ 4.5 30 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSKS5400-FSZ Tape and ammopack MOQ: 2000 pcs, 2000 pcs/ammopack Side view lens Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 6V R Forward current I 100 mA F Surge forward current t 100 s I 2A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T - 25 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 270 K/W thJA Rev. 2.4, 03-Sep-13 Document Number: 83780 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSKS5400 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 100 60 80 R = 270 K/W thJA R = 270 K/W thJA 60 40 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21322 T - Ambient Temperature (C) 21321 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA, t 20 ms V 1.3 1.7 V F p F Reverse voltage I = 10 A V6V R R Temperature coefficient of V I = 100 mA TK - 1.3 mV/K F F VF Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 30 pF R j Radiant intensity I = 100 mA, t 20 ms I 24.5 7 mW/sr F p e Radiant power I = 50 mA, t 20 ms 10 mW F p e Temperature coefficient of I = 50 mA TK - 0.8 %/K e F e Angle of half sensitivity 30 deg Peak wavelength I = 50 mA 950 nm F p Spectral bandwidth I = 50 mA 50 nm F I = 100 mA t 800 ns F r Rise time I = 1 A, t /T = 0.01, t 10 s t 450 ns F p p r BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 4 10 1.5 I = 10 mA F 1.4 3 10 1.3 2 10 1.2 1.1 1 10 1.0 0 10 0.9 0.8 -1 10 -45 -30 -15 0 15 3045 607590 0 1 2 3 4 14347 T - Ambient Temperature (C) V - Forward Voltage (V) 94 7996 amb F Fig. 3 - Pulse Forward Current vs. Forward Voltage Fig. 4 - Forward Voltage vs. Ambient Temperature Rev. 2.4, 03-Sep-13 Document Number: 83780 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) P - Power Dissipation (mW) F V V - Forward Voltage (V) I - Forward Current (mA) F F