TSKS5400S Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile package. The package is compatible to TEKT5400S pho- 14354 totransistor and TEKS5400 Photo Schmitt Trigger. Assembled on PWB, pairs of emitters and detectors operate as transmissive sensors and reflective sen- sors. Package compatible with TEKT5400S and Features TEKS5400 High radiant intensity Lead (Pb)-free component in accordance with Peak wavelength = 950 nm P RoHS 2002/95/EC and WEEE 2002/96/EC Side view package with spherical lens e3 Angle of half sensitivity = 30 Parts Table Part Ordering code Remarks TSKS5400S TSKS5400S MOQ: 2000 pcs in Plastic Bags TSKS5400S-ASZ MOQ: 2000 pcs, Ammopack, 2.54 mm pin distance (lead to lead), 16 mm height of taping Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit V Reverse voltage 6V R I Forward current 100 mA F t 100 s I Surge forward current 2A p FSM P Power dissipation 170 mW V Junction temperature T 100 C j T Operating temperature range - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg T Soldering temperature t 5 s, 2 mm from body 260 C sd Thermal resistance junction/ R 450 k/W thJA ambient Document Number 81074 www.vishay.com Rev. 1.5, 28-Nov-06 1TSKS5400S Vishay Semiconductors Basic Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I = 100 mA, t 20 ms V 1.3 1.7 V F p F I = 10 A V Reverse voltage 6V R R Junction capacitance V =0 V, f = 1 MHz, E = 0 C 50 pF R j I = 50 mA, t 20 ms I Radiant intensity 27mW/sr F p e Radiant power I = 50 mA, t 20 ms 10 mW F p e Temp. coefficient of I = 50 mA TK - 1.0 %K e F e Angle of half sensitivity 30 Peak wavelength I = 50 mA 950 nm F p I = 50 mA Spectral bandwidth 50 nm F I = 1 A, t /T = 0.01, t 10 s t Rise time 400 ns F p p r I = 1 A, t /T = 0.01, t 10 s t Fall time 450 ns F p p f Typical Characteristics T = 25 C, unless otherwise specified amb 4 200 10 3 10 150 R thJA 2 10 100 1 10 50 0 10 0 -1 10 020 40 60 80 100 0 1 2 3 4 T - Ambient Temperature (C) 14846 amb 94 7996 V - Forward Voltage (V) F Figure 1. Power Dissipation vs. Ambient Temperature Figure 3. Forward Current vs. Forward Voltage 125 1.5 I = 10 mA F 1.4 100 1.3 R thJA 75 1.2 1.1 50 1.0 25 0.9 0 0.8 020 40 60 80 100 -45 -30 -15 0 15 3045 607590 14847 T - Ambient Temperature (C) 14347 T - Ambient Temperature (C) amb amb Figure 2. Forward Current vs. Ambient Temperature Figure 4. Forward Voltage vs. Ambient Temperature www.vishay.com Document Number 81074 2 Rev. 1.5, 28-Nov-06 P - Power Dissipation (mW) I - Forward Current (mA) V F I- Forward Current (mA) F V - Forward Voltage F