X-On Electronics has gained recognition as a prominent supplier of TSHG8200 Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. TSHG8200 Infrared Emitters - High Power are a product manufactured by Vishay. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

TSHG8200 Vishay

Hot TSHG8200 electronic component of Vishay
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Part No.TSHG8200
Manufacturer: Vishay
Category: Infrared Emitters - High Power
Description: Infrared (IR) Emitter 830nm 1.5V 100mA 120mW/sr @ 100mA 20° Radial, 5mm Dia (T 1 3/4)
Datasheet: TSHG8200 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.77 ea
Line Total: USD 0.77 
Availability - 1900
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3876
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2486
10 : USD 0.9119
100 : USD 0.6524
500 : USD 0.6215
4000 : USD 0.6201

1900
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.77
10 : USD 0.539
50 : USD 0.4802
54 : USD 0.3248
148 : USD 0.3066

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Illumination Color
Length
Width
Brand
Lens Shape
Viewing Angle
Cnhts
Fall Time
Hts Code
Lens Dimensions
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TSHG8200 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSHG8200 and other electronic components in the Infrared Emitters - High Power category and beyond.

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TSHG8200 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Peak wavelength: = 830 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 10 Low forward voltage 94 8389 Suitable for high pulse current operation High modulation bandwidth: f = 18 MHz c Good spectral matching with CMOS cameras Compliant to RoHS Directive 2002/95/EC and in DESCRIPTION accordance to WEEE 2002/96/EC TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs Note double hetero (DH) technology with high radiant power and ** Please see document Vishay Material Category Policy: high speed, molded in a clear, untinted plastic package. www.vishay.com/doc 99902 APPLICATIONS Infrared radiation source for operation with CMOS cameras (illumination) High speed IR data transmission Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) tr (ns) e P TSHG8200 180 10 830 20 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHG8200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 180 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd J-STD-051, leads 7 mm soldered Thermal resistance junction/ambient R 230 K/W thJA on PCB Rev. 1.3, 23-Aug-11 Document Number: 84755 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSHG8200 www.vishay.com Vishay Semiconductors 200 120 180 100 160 140 80 120 R = 230 K/W thJA R = 230 K/W thJA 100 60 80 40 60 40 20 20 0 0 0 1020 3040506070 8090 100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21142 21143 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.5 1.8 V F p F Forward voltage I = 1 A, t = 100 s V 2.3 V F p F Temperature coefficient of V I = 1 mA TK - 1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 100 mA, t = 20 ms I 120 180 360 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 1600 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 50 mW F p e Temperature coefficient of I = 100 mA TK - 0.35 %/K e F e Angle of half intensity 10 deg Peak wavelength I = 100 mA 830 nm F p Spectral bandwidth I = 100 mA 40 nm F Temperature coefficient of I = 100 mA TK 0.25 nm/K p F p Rise time I = 100 mA t 20 ns F r Fall time I = 100 mA t 13 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 18 MHz DC AC c Virtual source diameter d3.7 mm Rev. 1.3, 23-Aug-11 Document Number: 84755 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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