TSHG6200 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 10 Low forward voltage 94 8389 Suitable for high pulse current operation High modulation bandwidth: f = 18 MHz c Good spectral matching with CMOS cameras Compliant to RoHS Directive 2002/95/EC and in DESCRIPTION accordance to WEEE 2002/96/EC TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs Note double hetero (DH) technology with high radiant power and ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 high speed, molded in a clear, untinted plastic package. APPLICATIONS Infrared radiation source for operation with CMOS cameras High speed IR data transmission PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) tr (ns) e p TSHG6200 180 10 850 20 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHG6200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 180 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd J-STD-051, leads 7 mm, Thermal resistance junction/ambient R 230 K/W thJA soldered on PCB Rev. 1.8, 24-Aug-11 Document Number: 81078 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSHG6200 www.vishay.com Vishay Semiconductors 200 120 180 100 160 140 80 120 R = 230 K/W thJA R = 230 K/W thJA 100 60 80 40 60 40 20 20 0 0 0 1020 3040506070 8090 100 0 10 203040 50607080 90 100 21142 T - Ambient Temperature (C) 21143 amb T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.5 1.8 V F p F Forward voltage I = 1 A, t = 100 s V 2.3 V F p F Temperature coefficient of V I = 1 mA TK - 1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 100 mA, t = 20 ms I 120 180 360 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 1800 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 50 mW F p e Temperature coefficient of I = 100 mA TK - 0.35 %/K e F e Angle of half intensity 10 deg Peak wavelength I = 100 mA 850 nm F p Spectral bandwidth I = 100 mA 40 nm F Temperature coefficient of I = 100 mA TK 0.25 nm/K p F p Rise time I = 100 mA t 20 ns F r Fall time I = 100 mA t 13 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 18 MHz DC AC c Virtual source diameter d3.7 mm Rev. 1.8, 24-Aug-11 Document Number: 81078 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F