X-On Electronics has gained recognition as a prominent supplier of TSSS2600 Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. TSSS2600 Infrared Emitters - High Power are a product manufactured by Vishay. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

TSSS2600 Vishay

TSSS2600 electronic component of Vishay
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Part No.TSSS2600
Manufacturer: Vishay
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power 950nm, TH-SL 2.6mW/sr, +/-25deg.
Datasheet: TSSS2600 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7596 ea
Line Total: USD 0.76 
Availability - 3953
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3603
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4532
10 : USD 0.3997
30 : USD 0.3767
100 : USD 0.3461
500 : USD 0.3346
1000 : USD 0.327

3953
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7596
10 : USD 0.4831
100 : USD 0.302
1000 : USD 0.2671
5000 : USD 0.251
10000 : USD 0.2389
25000 : USD 0.2375

4671
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 0.616
10 : USD 0.4438
50 : USD 0.3612
60 : USD 0.2898
164 : USD 0.273

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Illumination Color
Length
Width
Brand
Lens Shape
Viewing Angle
Cnhts
Hts Code
Lens Dimensions
Mxhts
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Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TSSS2600 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSSS2600 and other electronic components in the Infrared Emitters - High Power category and beyond.

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TSSS2600 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES Package type: leaded Package form: side view Dimensions (L x W x H in mm): 3.6 x 2.2 x 5 Peak wavelength: = 950 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 25, horizontal 94 8672 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Package matched with detector TEST2600 DESCRIPTION Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TSSS2600 is an infrared, 950 nm emitting diode in GaAs Note technology, molded in a miniature, clear plastic package ** Please see document Vishay Material Category Policy: with side view lens. www.vishay.com/doc 99902 APPLICATIONS Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600) PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) tr (ns) e p TSSS2600 2.6 25 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSSS2600 Bulk MOQ: 5000 pcs, 5000 pcs/bulk Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 2.0 A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient Leads not soldered R 450 K/W thJA Rev. 1.7, 24-Aug-11 Document Number: 81042 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSSS2600 www.vishay.com Vishay Semiconductors 250 125 200 100 75 150 R thJA R thJA 100 50 50 25 0 0 0 20 40 60 80 100 0 20 40 60 80 100 94 8029 T - Ambient Temperature (C) 94 7916 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.25 1.6 V F p F Forward voltage I = 1.5 A, t = 100 s V 2.2 V F p F Temperature coefficient of V I = 100 mA TK - 1.3 mV/K F F VF Reverse current V = 5 V I 100 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 30 pF R j I = 100 mA, t = 20 ms I 12.6 3 mW/sr F p e Radiant intensity I = 1.5 A, t = 100 s I 25 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 20 mW F p e Temperature coefficient of I = 100 mA TK - 0.8 %/K e F e horizontal 25 deg 1 Angle of half intensity vertical 60 deg 2 Peak wavelength I = 100 mA 950 nm F p Spectral bandwidth I = 100 mA 50 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p I = 100 mA t 800 ns F r Rise time I = 1.5 A t 400 ns F r I = 100 mA t 800 ns F f Fall time I = 1.5 A t 400 ns F f Virtual source diameter d2 mm Rev. 1.7, 24-Aug-11 Document Number: 81042 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
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Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
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Vishay Foil Resistors (Division of Vishay Precision Group)
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Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
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Vishay Thin Film
Vishay Vitramon
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Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
VITRAMON/VISHAY
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VSC
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VSS
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